基于GaN HEMT的高线性星载Doherty功率放大器设计  

Design of High Linear Space-Borne Doherty Power Amplifier Based on GaN HEMT

作　　者：李悬雷 李丽君 王晓青 张波权 郑惠文 LI Xuan-lei;LI Li-jun;WANG Xiao-qing;ZHANG Bo-quan;ZHENG Hui-wen(Shanghai Aerospace Electronics Co.,Ltd,Shanghai 201800,China)

机构地区：[1]上海航天电子有限公司,上海201800

出　　处：《微波学报》2022年第3期88-90,共3页Journal of Microwaves

摘　　要：在射频通信链路中,功率放大器决定了发射通道的线性、效率等关键指标。卫星通信由于是电池供电,对功率放大器的工作效率要求比较高。文章基于GaN HEMT晶体管采用对称设计完成了一款高效率的Doherty功率放大器。测试结果表明:该Doherty功放的功率增益大于29 dB;1 dB压缩点功率(P_(1 dB))大于35 dBm;在35 dBm输出时,其功率附加效率(PAE)大于47.5%,三阶交调失真(IMD3)大于35 dBc;在功率回退3 dB时,其PAE大于37%,IMD3大于32 dBc。The linear&efficiency of the transmitting channel in the RF(Radio Frequency)communication link depends on the power amplifier(PA).Because it is battery powered,satellite communication requires higher efficiency of power amplifier.In this paper,a high linear Doherty power amplifier is designed and fabricated based on GaN HEMT.The test results show that the power gain of the designed Doherty PA is greater than 29 dB;the P_(1 dB)(1 dB compression point)is larger than 35 dBm;the power-added-efficiency(PAE)is larger than 47.5%and the third-order intermodulation distortion(IMD3)is larger than 35 dBc at the 35 dBm working status;meanwhile,the PAE is larger than 37%,IMD3 is larger than 32 dBc,respectively at its 3 dB output power back-off working status.

关 键 词：DOHERTY功率放大器 氮化镓高电子迁移率晶体管(GaN HEMT) 三阶交调失真(IMD3) 

分 类 号：TN722.75[电子电信—电路与系统]