消费级混合式固态存储分析与研究  被引量:2

Performance Analysis and Study for Hybrid NAND Flash Memory

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作  者:罗龙飞 李蓍城 石亮[1] LUO Longfei;LI Shicheng;SHI Liang(Computer Science and Technology,Eastt China Normal University,Shanghai 200062,China)

机构地区:[1]华东师范大学计算机科学与技术学院,上海200062

出  处:《集成技术》2022年第3期71-84,共14页Journal of Integration Technology

基  金:国家自然科学基金面上项目(62072177);上海市自然科学基金面上项目(20ZR1417200)。

摘  要:混合式固态存储已成为当前消费级终端领域的主流存储设备。然而在学术领域,关于混合式固态存储设计和问题的讨论与分析仍不够充分。该文针对现有的混合式存储设备,结合相关领域前沿研究,从混合式闪存架构介绍、亟待解决的痛点问题和相关研究进展3个方面进行讨论和分析。文章介绍和分析了混合式闪存的主流架构及其特点,展示了在真实设备平台上测试的实验数据结果,揭露了混合式闪存中亟待解决的问题,重点介绍了读特征、写特征、读写冲突和容量特征相关问题。同时介绍了相应问题的最新研究进展,并分析了各个技术的优劣和未来的发展方向。Hybrid flash storage has become the mainstream storage device in the field of consumer device. However, the academic study on hybrid flash storage is still insufficient. Based on our research activities, practical experience on hybrid storage devices, and state-of-the-art researches, this paper introduces the architecture of hybrid flash memory, the pain points that need to be solved and the relevant research progress. Firstly, this paper introduces and analyses the hybrid flash memory architecture and the corresponding characteristics. Then the experimental results on real hybrid flash memory are shown and the problems of the hybrid flash memory to be solved are exposed. These problems are full into four categories,write characteristics, read characteristics, read/write interference, and volume characteristics. Finally, the latest research progresses of the corresponding problems are introduced. The advantages and disadvantages of each technique are summarized. Additionally, the future development direction is commented.

关 键 词:混合式闪存 读写冲突 读特征 写特征 容量特征 

分 类 号:TP333.7[自动化与计算机技术—计算机系统结构]

 

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