铜纳米颗粒有机浮栅存储器的制备与性能表征  

Preparation and Performance Characterization of Organic Floating Gate Memory Based on Cu Nanoparticles

作　　者：白宇杰 尹晋超 杨建红[1] Bai Yujie;Yin Jinchao;Yang Jianhong(School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China)

机构地区：[1]兰州大学物理科学与技术学院,兰州730000

出　　处：《半导体技术》2022年第6期455-459,467,共6页Semiconductor Technology

摘　　要：为了降低有机浮栅存储器功能层材料的制作成本,简化器件制备工艺和提高器件存储稳定性,通过多元醇法制取了分散的铜纳米颗粒。基于底栅顶接触型(BGTC)结构,将铜纳米颗粒通过低温旋涂工艺形成薄膜作为电荷俘获层,聚甲基丙烯酸甲酯(PMMA)薄膜作为隧穿层制备了有机非易失性浮栅存储器。由透射电子显微镜测试结果可知,制得的铜纳米颗粒平均直径约为25 nm。电学性能测试结果显示,制备的存储器有明显的场效应特性和存储特性,在±80 V的编程/擦除电压下可获得24.42 V的存储窗口和10^(4)s以上的电荷保持性能。实验结果表明,铜纳米颗粒可作为金、银、铂等贵金属纳米颗粒的高性能、低成本替代材料,在有机浮栅存储器中具有较好的应用前景。In order to reduce the production cost of functional layer materials,simplify the preparation process and improve storage stability of organic floating gate memory,dispersed Cu nanoparticles were prepared by polyol method.Based on the bottom-gate top-contact(BGTC)structure,the organic nonvolatile floating gate memory was prepared by forming a thin film of Cu nanoparticles by low-temperature spin-coating process as a charge trapping layer,and poly(methyl methacrylate)(PMMA)thin film as a tunneling layer.The transmission electron microscopy test results show that the average diameter of prepared Cu nanoparticles is about 25 nm.The electrical performance test results show that the prepared memory has obvious field effect characteristics and storage characteristics,and a memory window of 24.42 V and charge retention performance of above 10^(4) s are obtained at±80 V programming/erasing voltage.The experimental results show that Cu nanoparticles can be used as high-performance and low-cost alternative materials for gold,silver,platinum and other precious metal nanoparticles,which has a good application prospect in organic floating gate memory.

关 键 词：铜纳米颗粒 有机浮栅存储器 器件特性 并五苯 聚甲基丙烯酸甲酯(PMMA) 

分 类 号：TN386.2[电子电信—物理电子学]