Epitaxial integration of a perpendicularly magnetized ferrimagnetic metal on a ferroelectric oxide for electric-field control  

作　　者：Xin Zhang Pei-Xin Qin Ze-Xin Feng Han Yan Xiao-Ning Wang Xiao-Rong Zhou Hao-Jiang Wu Hong-Yu Chen Zi-Ang Meng Zhi-Qi Liu 

机构地区：[1]School of Materials Science and Engineering,Beihang University,Beijing 100191,China

出　　处：《Rare Metals》2022年第5期1554-1562,共9页稀有金属（英文版）

基　　金：the National Natural Science Foundation of China(Nos.52121001,51822101,51861135104 and 51771009)。

摘　　要：Ferrimagnets, which contain the advantages of both ferromagnets(detectable moments) and antiferromagnets(ultrafast spin dynamics), have recently attracted great attention. Here, we report the optimization of epitaxial growth of a tetragonal perpendicularly magnetized ferrimagnet Mn_(2)Ga on MgO. Electrical transport, magnetic properties and the anomalous Hall effect(AHE) were systematically studied. Furthermore, we successfully integrated high-quality epitaxial ferrimagnetic Mn_(2)Ga thin films onto ferroelectric 0.7PbMg_(1/3)Nb_(2/3)O_(3)–0.3PbTiO_(3) single crystals with a MgO buffer layer. It was found that the AHE of such a ferrimagnet can be effectively modulated by a small electric field over a large temperature range in a nonvolatile manner. This work thus demonstrates the great potential of ferrimagnets for developing high-density and low-power spintronic devices.

关 键 词：Ferroelectric oxides Ferrimagnetic metals PMN-PT Mn_(2)Ga Anomalous Hall effect 

分 类 号：TG14[一般工业技术—材料科学与工程] TP333[金属学及工艺—金属材料]