Enhancement in photovoltaic properties of Nd:SnS films prepared by low-cost NSP method  

作　　者：S.Sebastian I.Kulandaisamy A.M.S.Arulanantham S.Valanarasu A.Kathalingam Mohd.Shkir Salem AlFaify 

机构地区：[1]PG&Research Department of Physics,Arul Anandar College,Karumathur,Madurai 625514,India [2]Millimeter Wave Innovation Technology Research Center(MINT),Dongguk University-Seoul,Seoul 04620,Republic of Korea [3]Advanced Functional Materials&Optoelectronics Laboratory(AFMOL),Department of Physics,Faculty of Science,King Khalid University,Abha 9004,Saudi Arabia

出　　处：《Rare Metals》2022年第5期1661-1670,共10页稀有金属（英文版）

基　　金：the project from the Department of Science and Technology,New Delhi,India(DST-SERB)(No.SB/FTP/PS-131/2013);the Deanship of Scientific Research at King Khalid University for funding this work through research groups program under grant number R.G.P.2/42/40。

摘　　要：The inner transition metal(ITM) neodymium(Nd)-doped tin sulfide(Nd:SnS) thin films with various Nd concentrations were coated by nebulizer spray pyrolysis(NSP) technique at 350℃. All the coated films were analyzed for their structural, optical and photoelectrical properties. X-ray diffractometer(XRD) study showed(111) direction as the highly preferred orientation with orthorhombic crystal structure for all the films. The intensity of the peaks was found to increase until 5 at% Nd doping and then reduced for higher(7 at% Nd) doping concentration. Atomic force microscopic(AFM) images of the films proclaimed an increase in the surface and line roughness of the films by increasing Nd concentrations.Optical analysis on the films showed a variation in energy gap from 2.05 to 1.69 eV when the doping concentration increased from 0 at% to 7 at%. At 5 at% Nd doping, the photoluminescence(PL) spectra displayed a single strong emission peak at 723.1 nm with enhanced intensity corresponding to near-band-edge emission. All the SnS thin films exhibited p-type behavior with the lowest resistivity of ~ 4.311 Ω·cm and high carrier concentrations of ~ 1.441 × 10^(17)cm^(-3) for 5 at% Nd doping level as observed from Hall effect studies. Furthermore, fluorinedoped tin oxide(FTO)/n-CdS/p-Nd:SnS hetero-junction solar cells were prepared and the current–voltage curve in dark and light condition was obtained for the device. An efficiency of 0.135% was observed for the solar cell fabricated with 5 at% Nd-doped SnS thin film.

关 键 词：Rare earth doping NEODYMIUM SnS thin films Nebulizer spray Optical studies Solar cells 

分 类 号：TB383.2[一般工业技术—材料科学与工程]