硅基集成光子器件先进设计方法  

Advanced Designing Methods of Silicon Integrated Optical Devices

作　　者：郜定山 李书轶 蔡丽峰 GAO Dingshan;LI Shuyi;CAI Lifeng(Wuhan National Laboratory for Optoelectronics,Huazhong University of Science and Technology,Wuhan 430074,CHN)

机构地区：[1]华中科技大学武汉光电国家研究中心,武汉430074

出　　处：《半导体光电》2022年第2期201-206,共6页Semiconductor Optoelectronics

基　　金：国家重点研发计划项目(2019YFB2205202);国家自然科学基金面上项目(61975062)。

摘　　要：硅基集成光子器件具有体积小、集成度高的突出优势,在光通信、数据中心光互连等领域具有广阔应用前景。然而,硅基波导耦合器件尺寸相对较大、工作带宽和工艺容差受限。硅基多模路由光子器件设计还面临挑战。文章介绍了近年来发展起来的两种硅基集成光子器件先进设计方法:绝热捷径法和变换光学方法,简要阐述其物理原理,并展示在硅基集成光子器件设计中的典型应用。Silicon based integrated optical devices have the outstanding advantages of small footprint and high integration level. They have broad application prospects in the fields of optical communication, data center optical interconnection and so on. However, the size of silicon-based waveguide coupler is relatively large, and the working bandwidth and process tolerance are limited. The design of silicon-based multimode routing photonic devices still faces big challenges. In this paper, two advanced design methods are introduced for silicon-based integrated optical devices developed in recent years: shortcuts to adiabaticity method and transformation optics method, their physical principles are briefly expounded, and typical applications in the design of silicon-based integrated optical devices are presented.

关 键 词：硅基集成光子器件 绝热捷径法 变换光学方法 

分 类 号：TN256[电子电信—物理电子学]