硅基锗PIN光电探测器的研究进展  

Research Progresses of Si-based Ge PIN Photodetectors

作　　者：刘智[1,2] 成步文 LIU Zhi;CHENG Buwen(State Key Lab.on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,CHN;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,CHN)

机构地区：[1]中国科学院半导体研究所集成光电子学国家重点实验室,北京100083 [2]中国科学院大学材料科学与光电技术学院,北京100049

出　　处：《半导体光电》2022年第2期261-266,共6页Semiconductor Optoelectronics

基　　金：国家重点研发计划项目(2017YFA0206404,2020YFB2206103)。

摘　　要：随着硅基锗薄膜外延技术的突破,基于硅基锗材料的光电子器件快速发展,其中以硅基锗光电探测器最为突出。由于锗可以实现近红外通信波段的光吸收,而且完全兼容硅的CMOS工艺,硅基锗探测器几乎成为硅基光探测的唯一选择。文章主要介绍了面入射和波导耦合两类常见硅基锗光电探测器的研究进展,包括典型的器件结构,以及提升响应度和带宽等性能的主要途径。Since the breakthrough of epitaxy technology of Si-based Ge film,Si-based Ge optoelectronic devices have developed rapidly,among which Si-based Ge photodetectors are the most prominent.Because Ge can absorb the light in the near-infrared communication band and is fully compatible with the Si CMOS process,Si-based Ge detectors are almost the only choice for Si-based optical detection.This paper mainly introduces the research progresses of two common Si-based Ge photodetectors(normal incidence and waveguide coupling),including typical device structures,and the main methodes to improve the performance of responsivity and bandwidth.

关 键 词：硅基锗探测器 面入射 波导耦合 

分 类 号：TN36[电子电信—物理电子学]