面向原子级表面制造的等离子体诱导原子选择刻蚀技术  

Atomic surface manufacturing based on plasma-induced atomselective etching

作　　者：张翊 吴兵 张临风 邓辉 ZHANG Yi;WU Bing;ZHANG LinFeng;DENG Hui(Department of Mechanical and Energy Engineering,Southern University of Science and Technology,Shenzhen 518055,China)

机构地区：[1]南方科技大学工学院机械与能源工程系,深圳518055

出　　处：《中国科学：技术科学》2022年第6期882-892,共11页Scientia Sinica(Technologica)

基　　金：国家自然科学基金重点项目(批准号:52035009);国家自然科学基金青年科学基金项目(批准号:52005243)资助。

摘　　要：制造正从以经验技能为基础的制造Ⅰ和以经典理论为基础的制造Ⅱ迈向以量子理论为基础的制造Ⅲ.尽管制造的这三个范式出现在不同历史阶段,但它们将并存,甚至在未来可遇见的时期内,制造Ⅱ还依然起主导作用.其中制造Ⅲ的核心领域将是原子及近原子尺度制造(ACSM),涵盖制造的精度、结构尺寸及材料去除、迁移、增加的尺度.原子级的表面制造是ACSM发展的一个重要领域.本文将介绍一种基于等离子体诱导原子选择刻蚀原理(plasma-induced atom-selective etching,PASE)的原子级表面制造技术.晶体表面不同成键状态的原子在等离子体刻蚀反应中具有不同的反应优先等级,而这种反应优先级的调控可通过改变等离子体活性粒子成分、浓度、温度等来实现.因而,PASE技术可以选择性去除材料表面的多余原子,并最终实现原子级表面的创成.PASE技术已成功应用于Si,SiC,Al_(2)O_(3)等硬脆单晶材料的抛光,采用CF_(4)-O_(2)等离子体,可直接实现上述材料研磨表面(S_(a)>100 nm)的抛光,并高效率获得埃米级表面(S_(a)<0.5 nm),实现了原子级表面的制造.Manufacturing is developing from ManufacturingⅠ,based on empirical skills,and ManufacturingⅡ,based on classical theory,to ManufacturingⅢ,based on quantum theory.Although these three manufacturing paradigms appear at different historical stages,they will coexist,and ManufacturingⅡwill still play a leading role for the foreseeable future.The core area of ManufacturingⅢwill be atomic and close-to-atomic scale manufacturing(ACSM),covering manufacturing accuracy,feature dimensions,and the scale of material removal,migration,and addition.The manufacturing of atomic surfaces is an important area for the development of ACSM.This article will introduce a novel atomic surface fabrication technique named plasma-induced atom-selective etching(PASE).The atoms on the rough surface of a single-crystal material have different bonding states and therefore have different priorities during plasma etching.These reaction priorities can be modulated by changing the radicals,concentration,and temperature of the plasma.Hence,PASE could selectively remove the excess atoms on the single-crystal material surface and eventually achieve an atomic surface.PASE has been successfully applied to many hard and brittle materials,including Si,SiC,and Al_(2)O_(3).Using CF_(4)-O_(2) based plasma,a lapped surface with a surface roughness of over 100 nm can be directly polished to an angstrom level(S_(a)<0.5 nm),and the atomic surface can be achieved.

关 键 词：原子及近原子尺度制造 原子选择刻蚀 超精密加工 等离子体 

分 类 号：O539[理学—等离子体物理] O562[理学—物理]