反向恢复期脉冲作用下高压晶闸管失效分析  

Failure analysis of high voltage thyristor under impulseduring reverse recovery period

作　　者：叶明天 庞磊[1] 张乔根[1] 陶风波 许建刚 YE Mingtian;PANG Lei;ZHANG Qiaogen;TAO Fengbo;XU Jiangang(School of Electrical Engineering,Xi'an Jiaotong University,Xi'an 710049,China;State Grid Jiangsu Electric Power o.,Ltd.Research Institute,Nanjing 211103,China;State Grid Jiangsu Electric Power Co.,Ltd.,Nanjing 210024,China)

机构地区：[1]西安交通大学电气工程学院,陕西西安710049 [2]国网江苏省电力有限公司电力科学研究院,江苏南京211103 [3]国网江苏省电力有限公司,江苏南京210024

出　　处：《电力工程技术》2022年第4期135-142,共8页Electric Power Engineering Technology

基　　金：国家电网有限公司科技项目(SGJSDK00KJJS180-0292,SGJSDK00ZPJS1900278)。

摘　　要：为提取高压晶闸管反向恢复期内脉冲过程中表征器件状态的特征参量,明确器件失效机理,文中搭建了高压晶闸管反向恢复期脉冲作用实验平台与特性参数测试平台,利用实验平台研究了高压晶闸管在反向恢复期内不同阶段遭受脉冲冲击过程中的特性参数变化规律,并对退化和失效晶闸管进行拆片分析。结果表明:反向恢复期内脉冲作用下,高压晶闸管退化或失效表现为阻断能力的退化或丧失,由此引起晶闸管漏电流剧增,漏电流可作为表征晶闸管状态变化的特征参量;在反向恢复期初期和中期遭受冲击而失效的器件芯片上可见明显击穿点;在反向恢复期中期遭受冲击且阻断能力退化的器件芯片上可见热应力作用形成的圆斑;在反向恢复期末期遭受冲击而失效的器件芯片边缘与绝缘橡胶相接处可见雪崩击穿闪痕。To acquire the characteristic parameters which demonstrate the state of high voltage thyristor for clarifying its failure mechanism,an experiment platform which can not only generate high voltage pulses to thyristor at different moments during reverse recovery period,but also accurately measure its key characteristics is established.The change of characteristic parameters during the pulse impact process is studied,and the disassembly of the degraded and failed thyristors is analyzed.The results show that the damage of the thyristor can be mainly manifested as the reduction or loss of its blocking ability undertake voltage pulses in the middle of the reverse recovery period.Leakage current can be used as a characteristic parameter to estimate the state of the thyristor.For thyristors undertake voltage pulses in the beginning and middle of the reverse recovery period,obvious breakdown spot can be seen on the silicon wafer surface.Obvious breakdown points can be seen on the device chips that have been impacted and failed in the early and middle reverse recovery period.Circular spots formed by thermal stress can be seen on the device chips that are impacted in the middle of the reverse recovery period and have degraded blocking ability.Reverse recovery avalanche breakdown flash marks can be seen at the junction between the edge of the device chip and the insulating rubber that have been impacted and failed at the end of the period.

关 键 词：高压晶闸管 电压脉冲 反向恢复期 失效分析 特性参数 性能退化 

分 类 号：TM461.4[电气工程—电器]