Chip-integrated van der Waals PN heterojunction photodetector with low dark current and high responsivity  

作　　者：Ruijuan Tian Xuetao Gan Chen Li Xiaoqing Chen Siqi Hu Linpeng Gu Dries Van Thourhout Andres Castellanos-Gomez Zhipei Sun Jianlin Zhao 

机构地区：[1]Key Laboratory of Light Field Manipulation and Information Acquisition,Ministry of Industry and Information Technology,and Shaanxi Key Laboratory of Optical Information Technology,School of Physical Science and Technology,Northwestern Polytechnical University,710129 Xi’an,China [2]Photonics Research Group and Center for Nano and Biophotonics,Ghent University,B-9000 Gent,Belgium [3]Materials Science Factory,Instituto de Ciencia de Materiales de Madrid(ICMM-CSIC),E-28049 Madrid,Spain [4]Department of Electronics and Nanoengineering and QTF Centre of Excellence,Aalto University,FI-02150 Espoo,Finland

出　　处：《Light(Science & Applications)》2022年第5期901-910,共10页光（科学与应用)（英文版）

基　　金：supported by the National Key R&D Program of China(Grant Nos.2018YFA0307200 and 2017YFA0303800);the National Natural Science Foundation of China(Grant Nos.61905198,61775183,11634010,and 61675171);Key Research and Development Program in Shaanxi Province of China(Grant Nos.2017KJXX-12,2018JM1058,and 2018KW-009);the Fundamental Research Funds for the Central Universities(Grant Nos.3102017jc01001,3102018jcc034,and 3102017HQZZ022)。

摘　　要：Two-dimensional materials are attractive for constructing high-performance photonic chip-integrated photodetectors because of their remarkable electronic and optical properties and dangling-bond-free surfaces.However,the reported chip-integrated two-dimensional material photodetectors were mainly implemented with the configuration of metalsemiconductor-metal,suffering from high dark currents and low responsivities at high operation speed.Here,we report a van der Waals PN heterojunction photodetector,composed of p-type black phosphorous and n-type molybdenum telluride,integrated on a silicon nitride waveguide.The built-in electric field of the PN heterojunction significantly suppresses the dark current and improves the responsivity.Under a bias of 1 V pointing from n-type molybdenum telluride to p-type black phosphorous,the dark current is lower than 7 nA,which is more than two orders of magnitude lower than those reported in other waveguide-integrated black phosphorus photodetectors.An intrinsic responsivity up to 577 mA W^(−1) is obtained.Remarkably,the van der Waals PN heterojunction is tunable by the electrostatic doping to further engineer its rectification and improve the photodetection,enabling an increased responsivity of 709 mA W^(−1).Besides,the heterojunction photodetector exhibits a response bandwidth of~1.0 GHz and a uniform photodetection over a wide spectral range,as experimentally measured from 1500 to 1630 nm.The demonstrated chip-integrated van der Waals PN heterojunction photodetector with low dark current,high responsivity and fast response has great potentials to develop high-performance on-chip photodetectors for various photonic integrated circuits based on silicon,lithium niobate,polymer,etc.

关 键 词：HETEROJUNCTION RESPONSIVITY WAVEGUIDE 

分 类 号：TN382[电子电信—物理电子学]