硅片表面织构对“SE+PERC”双面单晶硅太阳电池电性能影响的研究  

STUDY ON THE INFLUENCE OF SILICON WAFER SURFACE TEXTURE ON THE ELECTRICAL PROPERTIES OF“SE+PERC”BIFACIAL MONO-Si SOLAR CELLS

作　　者：王守志 王丽婷 周啸颖 孙航 刘阳 黄国平 Wang Shouzhi;Wang Liting;Zhou Xiaoying;Sun Hang;Liu Yang;Huang Guoping(CECEP Solar Energy Technology(Zhenjiang)Co.,Ltd.,Zhenjiang 212132,China)

机构地区：[1]中节能太阳能科技(镇江)有限公司,镇江212132

出　　处：《太阳能》2022年第7期24-33,共10页Solar Energy

摘　　要：在硅片制绒过程,研究了制绒添加剂体积分数、反应时间和反应温度对单晶硅片表面织构的微观形貌、反射率,以及制备的“选择性发射极(SE)+PERC”双面单晶硅太阳电池电性能的影响。结果表明:在目前单晶硅片制绒设备和工艺条件下,当碱液(KOH)体积分数为2%、制绒添加剂体积分数为0.7%、反应温度为84℃、反应时间为440 s时,制备的单晶硅片表面的金字塔尺寸较小,均匀性强,硅片表面的反射率最低,仅为9.914%,而得到的“SE+PERC”双面单晶硅太阳电池的光电转换效率高达22.714%;调整制绒参数,可以有效提高单晶硅片表面织构中金字塔的均匀性,降低硅片表面的反射率,从而提高“SE+PERC”双面单晶硅太阳电池的光电转换效率。In the process of silicon wafer texturing,this paper discusses the micromorphology and reflectivity of the surface texture of mono-Si wafers by the volume fraction of texturing additives,reaction time and reaction temperature,as well as the influence of the above factors on the electrical properties of the prepared“SE+PERC”bifacial mono-Si solar cells.The results show that,under the current mono-Si wafer texturing equipment and process conditions,when the volume fraction of KOH is 2%,the volume fraction of texturing additives is 0.7%,the reaction temperature is 84℃,and the reaction time is 440 s,the pyramid size of prepared mono-Si wafer surface is small and the uniformity is strong,the reflectivity of the silicon wafer surface is only 9.914%,and the photoelectric conversion efficiency of the obtained“SE+PERC”bafacial mono-Si solar cell is as high as 22.714%.The texturing parameters can effectively improve the uniformity of the pyramids in the surface texture of the mono-Si wafer,reduce the reflectivity of the silicon wafer surface,and thus improve the photoelectric conversion efficiency of“SE+PERC”bafacial mono-Si solar cells.

关 键 词：选择性发射极 钝化发射极与背接触 双面单晶硅太阳电池 表面织构 制绒添加剂 电性能 

分 类 号：TM914.41[电气工程—电力电子与电力传动]