Complete photonic bandgap in silicon nitride slab assisted by effective index difference between polarizations  

作　　者：Can Ma Jin Hou Chunyong Yang Ming Shi Shaoping Chen 

机构地区：[1]Hubei Key Laboratory of Intelligent Wireless Communications,Hubei Engineering Research Center for Intelligent Internet of Things,College of Electronic and Information Engineering,South-Central MinZu University,Wuhan 430074,China

出　　处：《Frontiers of Optoelectronics》2022年第2期65-71,共7页光电子前沿（英文版）

基　　金：This work was supported by the National Natural Science Foundation of China(Grant Nos.11504435 and 62171478);the Natural Science Foundation of Hubei Province,China(No.2020CFB450).

摘　　要：The slab effective index difference between the transverse-electric(TE)and transverse-magnetic(TM)polarizations was utilized to obtain complete photonic bandgap(CPBG)in a silicon nitride(Si_(x)N_(y))photonic crystal slab.For this,coincident frequency range in the TE photonic bandgap(PBG)and TM PBG,which denotes the CPBGs of the slab,must be found with the same structure.Through adjusting the effective index pair of TE and TM polarizations by changing the thickness of the Si_(x)N_(y)core layer,and also optimizing the structure parameters within the photonic crystal plane,a large normalized CPBG of 5.62%was theoretically obtained in a slab of Si_(x)N_(y)with a refractive index of 2.5.Moreover,based on the obtained CPBG,a microcavity which could support both TE and TM polarization was theoretically demonstrated.The cavity modes for different polarizations were both well confined,which proved the reliability of the CPBG.In addition,using the same method,the lowest refractive index of Si_(x)N_(y)on silica slab for a CPBG could be extended to as low as 2.The results indicate that there is potential for development of various high-performance CPBG devices based on Si_(x)N_(y)slab technology.

关 键 词：Silicon nitride slab Complete photonic bandgap(CPBG) MICROCAVITY Slab device 

分 类 号：O43[机械工程—光学工程]