化学气相沉积生长氧化铪薄膜研究进展  

Advances in Preparation of Hafnium Oxide Films by Chemical Vapor Deposition

作　　者：涂溶[1] 刘子鸣 徐青芳 章嵩[1] TU Rong;LIU Zi-Ming;XU Qing-Fang;ZHANG Song(State Key Laboratory of Advanced Technology for Materials Synthesis and Processing,Wuhan University of Technology,Wuhan 430070,China)

机构地区：[1]武汉理工大学材料复合新技术国家重点实验室,武汉430070

出　　处：《现代技术陶瓷》2022年第3期187-196,共10页Advanced Ceramics

摘　　要：氧化铪薄膜具有高介电常数、大击穿场强、高热稳定性、高力学强度等优势,是新一代高集成芯片中的理想介质材料。本文总结了氧化铪薄膜的主要特性、制备技术及在芯片介质层中的应用。针对芯片介质层的电、热、力学性能与生产要求,以氧化铪薄膜制备技术的发展历程为主线,重点介绍各类化学气相沉积方法的特点与典型研究成果,讨论了氧化铪薄膜制备技术存在的问题,并对该领域未来的发展趋势进行了展望。A new generation of chips made feasible by hafnium oxide(HfO_(2)) films,a promising dielectric material with high dielectric constant,breakdown field strength,thermal stability,and mechanical strength.This review summarized the characteristics of HfO_(2)films,and applications in dielectric layers.It revealed the advances in electrical,thermal,mechanical properties and production requirements.The main line was the developing course of HfO_(2)films,with emphasis on the characteristics of various types of chemical vapor deposition methods and the typical research achievements.Finally,the problems of HfO_(2)films in preparation technology,and the future trend of the development in dielectric materials have been discussed.

关 键 词：氧化铪(HfO_(2))薄膜 芯片介质层 研究进展 制备技术 

分 类 号：TB383[一般工业技术—材料科学与工程]