基于GaN管芯的宽带高效功放设计  

A Broadband Power Amplifier with High Efficiency Based on GaN HEMT

作　　者：刘云刚 陈长泳 李强斌 LIU Yungang;CHEN Changyong;LI Qiangbin(Southwest China Research Institute of Electronic Equipment,Chengdu 610036,China;Sichuan Province Engineering Research Center for Broadband Microwave Circuit High Density Integration,Chengdu 610036,China)

机构地区：[1]中国电子科技集团公司第二十九研究所,成都610036 [2]四川省宽带微波电路高密度集成工程研究中心,成都610036

出　　处：《电子信息对抗技术》2022年第4期104-107,116,共5页Electronic Information Warfare Technology

摘　　要：基于GaN HEMT管芯开展宽带高效功放的设计,利用负载牵引技术获得管芯的最佳输出阻抗,结合小信号S参数开展电路设计;采用多节阻抗匹配技术设计输入、输出匹配网络,实现宽带特性;采用超高介电常数基材实现小型化。样件测试结果表明:在2~6 GHz频带内,输出功率大于30瓦,增益大于12 dB,附加效率大于45%。Based on GaN HEMT transistor,with the optimal output impedance obtained using loadpull technology,the circuit is designed on the optimal output impedance and s-parameter.The multi-section impedance matching technique is applied to the design of the input and output matching networks to obtain a good wide-band performance.Miniaturization is achieved on super high-k substrate.A GaN power amplifier from 2~6 GHz,which has high output power with excellent efficiency,is designed,fabricated and tested.The measured results is shown that the saturated output power is more than 30W,the small signal gain is higher than 12 dB,and the power added efficiency is more than 45%.

关 键 词：GaN功放 负载牵引 宽带匹配 ADS仿真软件 

分 类 号：TN722.75[电子电信—电路与系统]