高带宽存储器测试技术研究  

Research on High Bandwidth Memory Testing

作　　者：钟伟军 吴迪 孔宪伟 

机构地区：[1]中国电子技术标准化研究院 [2]中国信息通信研究院

出　　处：《信息技术与标准化》2022年第7期28-32,36,共6页Information Technology & Standardization

摘　　要：针对高带宽存储器(HBM)测试工程化实现的技术难题,重点研究了HBM的基本结构,分析了测试难点,从测试流程和测试项两个角度对比了DDR SDRAM与HBM两者的差异,并总结了底层逻辑硅片测试、TSV连接性测试、堆叠物理层测试和性能测试等HBM测试所包含的核心技术。提出了HBM测试中关键实施步骤及其技术要求,为制定HBM产品工程化量产测试方案提供了参考。In view of the technical problems in the engineering implementation of high bandwidth memory(HBM)test,this paper focuses on the basic structure of HBM,analyzes the test difficulties,compares the differences between DDR SDRAM and HBM from the perspective of test process and test items,and summarizes the key technologies in the HBM test items such as bottom logic silicon wafer test,TSV connectivity test,stacked physical layer test and performance test.The key implementation steps and technical requirements in HBM testing are put forward,which provides a reference for formulating the engineering mass production testing scheme of HBM products.

关 键 词：高带宽存储器 存储墙 硅通孔技术 微凸点 已知合格堆叠硅片 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]