机构地区:[1]School of Materials Science and Engineering,Shaanxi University of Technology,Hanzhong 723001,China [2]Division of Nanodevices and Related Nanomaterials,Printable Electronics Research Centre,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,No.398 Ruoshui Road,SEID,Suzhou Industrial Park,Suzhou 215123,China [3]School of Nano Technology and Nano Bionics,University of Science and Technology of China,Hefei 230026,China [4]National and Local Joint Engineering Laboratory for Slag Comprehensive Utilization and Environmental Technology,Shaanxi University of Technology,Hanzhong 723001,China [5]Nanomaterials Research Institute,National Institute of Advanced Industrial Science and Technology(AIST),Tsukuba 3058565,Japan [6]Advanced Materials Division,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,No.398 Ruoshui Road,SEID,Suzhou Industrial Park,Suzhou 215123,China [7]Institute of High Performance Computing,Agency for Science,Technology and Research,Singapore 138632,Singapore [8]School of Chemical and Biomolecular Engineering,The University of Sydney,Camperdown,NSW 2006,Australia
出 处:《Nano Research》2022年第6期5517-5526,共10页纳米研究(英文版)
基 金:supported by the National Key Research and Development Program of China(No.2020YFA0714700);the National Natural Science Foundation of China(No.61874132);Key Research Program of Frontier Science of Chinese Academy of Sciences(No.QYZDB-SSWSLH031);the Shaanxi Province Natural Science Foundation(No.2017JM5063);Cooperation Project of Vacuum Interconnect Nano X Research Facility(No.NANO-X)of Suzhou nanotechnology and Nano-Bionics Institute,Chinese Academy of Sciences(No.E20045);China scholarship fund(No.201708615046);Y.C.acknowledges the Australian Research Council under the Future Fellowships scheme(No.FT160100107);M.T.thanks Prof.T.Okazaki(National Institute of Advanced Industrial Science and Technology)for experimental help.
摘 要:Monochiral single-walled carbon nanotubes(SWCNTs)can enable high-performance carbon-based electronic devices and integrated circuits.However,their fabrication often requires complex SWCNT purification and enrichment.Herein,we showed that isoindigo-based polymer derivatives(PDPPIID and PFIID)directly enriched(9,8)nanotubes from as-synthesized SWCNT powders selectively and efficiently to yield high concentration(9,8)nanotube inks.The selective wrapping mechanism was elucidated by classical full-atomistic molecular dynamic(MD)simulations.Thin-film transistors(TFTs)were fabricated by depositing the SWCNT ink into device channels using aerosol jet printing.TFT performance was strongly influenced by polymer residues,the deposition condition(humidity),and ink concentration.Optimized TFTs showed excellent device-to-device uniformity with 108 on/off ratios.Further,optoelectronic transistors were fabricated,and their photoelectrical neuromorphic characteristics,storage,memory,and logic functions were characterized under the pulsed light and voltage stimulations,demonstrating excellent application potentials.
关 键 词:monochiral carbon nanotube polymer wrapping printed thin-film transistor photoelectrical synergistic molecular dynamic simulation
分 类 号:TB3[一般工业技术—材料科学与工程]
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