Effects of interfacial wettability on arc erosion behavior of Zn_(2)SnO_(4)/Cu electrical contacts  

作　　者：Wei-Jian Li Zi-Yao Chen Hao Jiang Xiao-Han Sui Cong-Fei Zhao Liang Zhen Wen-Zhu Shao 

机构地区：[1]School of Materials Science and Engineering,Harbin Institute of Technology,Harbin 150001,China [2]College of Nuclear Equipment and Nuclear Engineering,Yantai University,Yantai 264005,China [3]National Key Laboratory of Precision Hot Processing of Metals,Harbin Institute of Technology,Harbin 150001,China

出　　处：《Journal of Materials Science & Technology》2022年第14期64-75,共12页材料科学技术（英文版）

基　　金：financially supported by the National Natural Science Foundation of China(Nos.51877048 and 11875046)。

摘　　要：Interface wettability is a vital role in directly impacting the electrical contact characteristics of oxides/Cubased composites under arc erosion.Exploring its influence mechanism,especially at atomic/electronic scales,is significant but challenging for the rational design of oxides/Cu contacts.Here,we designed Zn_(2)SnO_(4)/Cu electrical contacts aiming to solve the poor wettability of SnO_(2)/Cu composites.It was found that Zn_(2)SnO_(4)could remarkably improve the arc resistance of Cu-based electrical contacts,which was benefited by the excellent interface wettability of Zn_(2)SnO_(4)/Cu.The characterization of eroded surface indicated that Zn_(2)SnO_(4)particles distributed uniformly on the contact surface,leading to stable electrical contact characteristic.Nevertheless,SnO_(2)considerably deteriorated the arc resistance of SnO_(2)/Cu composite by agglomerating on the surface.The effect mechanism of wettability on arc resistance was investigated through density function theory(DFT)study.It revealed that strong polar covalent bonds across the Zn_(2)SnO_(4)/Cu interface contributed to improving the interfacial adhesion strength/wettability and thus significantly enhanced the arc resistance.For binary SnO_(2)/Cu interface,ionic bonds resulted in weak interface adhesion,giving rise to deterioration of electrical contact characteristic.This work discloses the bonding mechanism of oxide/Cu interfaces and paves an avenue for the rational design of ternary oxide/Cu-based electrical contact materials.

关 键 词：Zn_(2)SnO_(4)/Cu electrical contacts Arc erosion WETTABILITY DFT calculations Electronic structure 

分 类 号：TG172[金属学及工艺—金属表面处理]