In Situ Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices  

作　　者：Dong Pan Huading Song Shan Zhang Lei Liu Lianjun Wen Dunyuan Liao Ran Zhuo Zhichuan Wang Zitong Zhang Shuai Yang Jianghua Ying Wentao Miao Runan Shang Hao Zhang Jianhua Zhao 潘东;宋化鼎;张珊;刘磊;文炼均;廖敦渊;卓然;王志川;张梓桐;杨帅;应江华;苗文韬;尚汝南;张浩;赵建华(State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,P.O.Box 912,Beijing 100083,China;Center of Materials Science and Optoelectronics Engineering,and CAS Center for Excellence in Topological Quantum Computation,University of Chinese Academy of Sciences,Beijing 100190,China;State Key Laboratory of Low Dimensional Quantum Physics,Department of Physics,Tsinghua University,Beijing 100084,China;Beijing Academy of Quantum Information Sciences,Beijing 100193,China;Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;Frontier Science Center for Quantum Information,Beijing 100084,China)

机构地区：[1]State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,P.O.Box 912,Beijing 100083,China [2]Center of Materials Science and Optoelectronics Engineering,and CAS Center for Excellence in Topological Quantum Computation,University of Chinese Academy of Sciences,Beijing 100190,China [3]State Key Laboratory of Low Dimensional Quantum Physics,Department of Physics,Tsinghua University,Beijing 100084,China [4]Beijing Academy of Quantum Information Sciences,Beijing 100193,China [5]Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China [6]Frontier Science Center for Quantum Information,Beijing 100084,China

出　　处：《Chinese Physics Letters》2022年第5期100-107,共8页中国物理快报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.92065106,61974138,12104053,and 11704364);the Beijing Natural Science Foundation(Grant No.1192017);Tsinghua University Initiative Scientifc Research Program;the support from Youth Innovation Promotion Association,Chinese Academy of Sciences(Grant No.Y2021043);China Postdoctoral Science Foundation(Grant Nos.2020M670173 and 2020T130058)。

摘　　要：We demonstrate the in situ growth of ultra-thin InA s nanowires with an epitaxial Al film by molecular-beam epitaxy.Our InAs nanowire diameter(~30 nm)is much thinner than before(~100 nm).The ultra-thin InAs nanowires are pure phase crystals for various different growth directions.Transmission electron microscopy confirms an atomically abrupt and uniform interface between the Al shell and the InAs wire.Quantum transport study on these devices resolves a hard induced superconducting gap and 2 e-periodic Coulomb blockade at zero magnetic field,a necessary step for future Majorana experiments.By reducing wire diameter,our work presents a promising route for reaching fewer sub-band regime in Major ana nanowire devices.

关 键 词：NANOWIRES interface REGIME 

分 类 号：O469[理学—凝聚态物理]