Highly Sensitive Mid-Infrared Photodetector Enabled by Plasmonic Hot Carriers in the First Atmospheric Window  

作　　者：Yuan-Fang Yu Ye Zhang Fan Zhong Lin Bai Hui Liu Jun-Peng Lu Zhen-Hua Ni 于远方;张也;仲帆;白琳;刘辉;吕俊鹏;倪振华(School of Physics,Southeast University,Nanjing 211189,China;National Laboratory of Solid State Microstructures&School of Physics,Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210093,China)

机构地区：[1]School of Physics,Southeast University,Nanjing 211189,China [2]National Laboratory of Solid State Microstructures&School of Physics,Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210093,China

出　　处：《Chinese Physics Letters》2022年第5期108-112,共5页中国物理快报（英文版）

基　　金：supported by the National Key Research and Development Program of China(Grant No.2017YFA0205700);the Strategic Priority Research Program of Chinese Academy of Sciences(Grant No.XDB30000000);the China Postdoctoral Science Foundation(Grant No.2021M690625);the Jiangsu Planned Projects for Postdoctoral Research Funds(Grant No.2021K106B)。

摘　　要：The first atmospheric window of 3-5μm in the mid-infrared(MIR)spectral range pertains to crucial application fields,with particular scientific and technological importance.However,conventional narrow-bandgap semiconductors operating at this band,represented by mercury cadmium telluride and indium antimonide,suffer from limited specific detectivity at room temperature and hindered optoelectronic integration.In this study,a plasmonic hot electron-empowered MIR photodetector based on Al-doped ZnO(AZO)/bi-layer graphene heterostructure is demonstrated.Free electrons oscillate coherently in AZO disk arrays,resulting in strong localized surface plasmon resonance(LSPR)in the MIR region.The photoelectric conversion efficiency at 3-5μm is significantly improved due to plasmon-induced hot-electron extraction and LSPR-enhanced light absorption.The specific detectivity reaches about 1.4×10^(11)Jones and responsivity is up to 4712.3 A/W at wavelength of 3μm at room temperature.The device’s specific detectivity is among the highest performance of commercial state-ofthe-art photodetectors and superior to most of the other 2 D materials based photo detectors in the MIR region.These results demonstrate that a plasmonic heavily doped metal oxides/2 D material heterostructure is a suitable architecture for constructing highly sensitive room-temperature MIR photodetectors.

关 键 词：INFRARED HIGHLY NARROW 

分 类 号：TN219[电子电信—物理电子学] TN15