Tunable Spin Hall Magnetoresistance in All-Antiferromagnetic Heterostructures  

作　　者：Lin Huang Yongjian Zhou Tingwen Guo Feng Pan Cheng Song 黄琳;周永健;郭庭温;潘峰;宋成(Key Laboratory of Advanced Materials(MOE),School of Materials Science and Engineering,Tsinghua University,Beijing 100084,China)

机构地区：[1]Key Laboratory of Advanced Materials(MOE),School of Materials Science and Engineering,Tsinghua University,Beijing 100084,China

出　　处：《Chinese Physics Letters》2022年第4期74-78,共5页中国物理快报（英文版）

基　　金：supported by the National Key R&D Program of China(Grant No.2021YFB3601301);the National Natural Science Foundation of China(Grant No.51871130);the Natural Science Foundation of Beijing Municipality(Grant No.JQ20010)。

摘　　要：We investigate the spin Hall magnetoresistance(SMR)in all-antiferromagnetic heterostructuresα-Fe_(2)O_(3)/Cr_(2)O_(3)with Pt contacts.When the temperature is ultralow(<50 K),the spin current generated in the Pt layer cannot be transmitted through Cr_(2)O_(3)(t=4 nm),and the SMR is near zero.Meanwhile,when the temperature is higher than the spin fluctuation temperature T_(F)(≈50 K)of Cr_(2)O_(3) and lower than its Néel temperature T_(N)(≈300 K),the spin current goes through the Cr_(2)O_(3) layer and is reflected at theα-Fe_(2)O_(3)/Cr_(2)O_(3) interface;an antiferromagnetic(negative)SMR is observed.As temperature increases higher than T_(N),paramagnetic(positive)SMR mainly arises from the spin current reflection at the Cr_(2)O_(3)/Pt interface.The transition temperatures from negative to positive SMR are enhanced with increasing Cr_(2)O_(3) layer thickness,accompanied by the absence of SMR signals when t=10 nm.Such a tunable SMR builds a bridge between spin transport and structures.It also enriches antiferromagnetic spintronics.

关 键 词：FERROMAGNETIC reflected arise 

分 类 号：O469[理学—凝聚态物理]