Epitaxial Growth and Characteristics of Nonpolar a-Plane InGaN Films with Blue-Green-Red Emission and Entire In Content Range  

作　　者：Jianguo Zhao Kai Chen Maogao Gong Wenxiao Hu Bin Liu Tao Tao Yu Yan Zili Xie Yuanyuan Li Jianhua Chang Xiaoxuan Wang Qiannan Cui Chunxiang Xu Rong Zhang Youdou Zheng 赵见国;陈凯;宫毛高;胡文晓;刘斌;陶涛;严羽;谢自力;李元元;常建华;王潇璇;崔乾楠;徐春祥;张荣;郑有炓(Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,School of Electronic Science and Engineering,Nanjing University,Nanjing 210093,China;School of Electronics and Information Engineering,Nanjing University of Information Science and Technology,Nanjing 210044,China;Xiamen University,Xiamen 361000,China;State Key Laboratory of Bioelectronics,School of Biological Science and Medical Engineering,Southeast University,Nanjing 210096,China)

机构地区：[1]Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,School of Electronic Science and Engineering,Nanjing University,Nanjing 210093,China [2]School of Electronics and Information Engineering,Nanjing University of Information Science and Technology,Nanjing 210044,China [3]Xiamen University,Xiamen 361000,China [4]State Key Laboratory of Bioelectronics,School of Biological Science and Medical Engineering,Southeast University,Nanjing 210096,China

出　　处：《Chinese Physics Letters》2022年第4期83-87,共5页中国物理快报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.62074077,61921005,61974062,and 61904082);the China Postdoctoral Science Foundation(Grant No.2020M671441);the Natural Science Foundation of the Jiangsu Higher Education Institutions of China(Grant Nos.19KJB510006 and 19KJB510039);the Natural Science Foundation of Jiangsu Province(Grant No.BK20190765)。

摘　　要：Nonpolar(1120)plane In_(x)Ga_(1-x)N epilayers comprising the entire In content(x)range were successfully grown on nanoscale Ga N islands by metal-organic chemical vapor deposition.The structural and optical properties were studied intensively.It was found that the surface morphology was gradually smoothed when x increased from 0.06 to 0.33,even though the crystalline quality was gradually declined,which was accompanied by the appearance of phase separation in the In_(x)Ga_(1-x)N layer.Photoluminescence wavelengths of 478 and 674 nm for blue and red light were achieved for x varied from 0.06 to 0.33.Furthermore,the corresponding average lifetime(τ_(1/e))of carriers for the nonpolar In Ga N film was decreased from 406 ps to 267 ps,indicating that a high-speed modulation bandwidth can be expected for nonpolar In Ga N-based light-emitting diodes.Moreover,the bowing coefficient(b)of the(1120)plane In Ga N was determined to be 1.91 e V for the bandgap energy as a function of x.

关 键 词：POLAR LIFETIME separation 

分 类 号：TB383.2[一般工业技术—材料科学与工程] TN312.8[电子电信—物理电子学]