Phase engineering in NaNbO_(3) antiferroelectrics for high energystorage density  

作　　者：Zhengu Chen Shuaifei Mao Li Ma Gengguang Luo Qin Feng Zhenyong Cen Fujita Toyohisa Xiuning Peng Laijun Liu Huanfu Zhou Changzheng Hu Nengneng Luo 

机构地区：[1]School of Chemistry&Chemical Engineering,Guangxi University,Nanning,530004,China [2]Guangxi Key Laboratory of Processing for Non-ferrous Metallic and Featured Materials,School of Resources,Environment and Materials,Guangxi University,Nanning,530004,China [3]Center on Nanoenergy Research,School of Resources,Environment and Materials,Guangxi University,Nanning,530004,China [4]School of Civil Engineering and Architecture,Guangxi University,Nanning,530004,China [5]College of Materials Science and Engineering,Guilin University of Technology,Guilin,541004,China

出　　处：《Journal of Materiomics》2022年第4期753-762,共10页无机材料学学报（英文）

基　　金：This work was financially supported by the National Natural Science Foundation of China(Grant Nos.11864004 and 52072080);The author also thanks to the fund(Grant No.20KF-16)from the Key Laboratory of New Processing Technology for Nonferrous Metal&Materials,Ministry of Education/Guangxi Key Laboratory of Optical and Electronic Materials and Devices,Guilin University of Technology,Guilin(541004),China.

摘　　要：The NaNbO_(3) antiferroelectrics have been considered as a potential candidate for dielectric capacitorsapplications. However, the high-electric-field-unstable antiferroelectric phase resulted in low energystorage density and efficiency. Herein, good energy storage properties were realized in (1-x)NaNbO_(3)- xNaTaO_(3) ceramics, by building a new phase boundary. As a result, a high recoverable energy density(Wrec) of 2.2 J/cm3 and efficiency (h) of 80.1% were achieved in 0.50NaNbO_(3)-0.50NaTaO_(3) ceramic at300 kV/cm. The excellent energy storage performance originates from an antiferroelectric-paraelectricphase boundary with simultaneously high polarization and low hysteresis, by tailoring the ratio ofantiferroelectric and paraelectric phases. Moreover, the 0.50NaNbO_(3)-0.50NaTaO_(3) ceramic also exhibitedgood temperature and frequency stability, together with excellent charge-discharge performance. Theresults pave a good way of designing new NaNbO_(3)-based antiferroelectrics with good energy storageperformance.

关 键 词：NaNbO_(3)ceramics ANTIFERROELECTRICS Paraelectrics Energy storage density Dielectric capacitors 

分 类 号：TQ17[化学工程—硅酸盐工业]