共溅射法制备AlSb薄膜及其性质研究  

Preparation of AlSb Thin Films by Co-sputtering and Its Character Research

作　　者：常璐 刘竞艳 王朋伟 田弋纬 CHANG Lu;LIU Jingyan;WANG Pengwei;TIAN Yiwei(Xi'an Hantang Analysis&Test Co.,Ltd.,Xi'an 710016,China)

机构地区：[1]西安汉唐分析检测有限公司,陕西西安710016

出　　处：《热加工工艺》2022年第12期77-79,共3页Hot Working Technology

摘　　要：使用Al、Sb单质靶材,采用共溅射法制备Al、Sb薄膜,并进行原位退火处理以获得AlSb薄膜。采用X射线衍射仪(XRD)和俄歇电子能谱(AES)分别分析了该薄膜的结构和元素的深度剖析及化学价态。结果表明:共溅射制备的AlSb薄膜呈立方相结构,沿(111)晶向择优取向。共溅射制备的AlSb薄膜表面含有Al、C、Sb和O元素,其中Al元素显示电正性,Sb元素显示电负性。Al and Sb thin films were prepared by co-sputtering with Al and Sb targets and annealed in order to obtain AlSb thin films. The structural and chemical valence properties of the thin films were studied by XRD and AES. The results show that AlSb is cube structure and preferred orientation along the(111) crystal direction. There are Al, C, Sb and O elements in the surface of AlSb films. Al element shows electronegativity;Sb element shows electronegativity in the films.

关 键 词：ALSB 共溅射 AES 

分 类 号：TG174.4[金属学及工艺—金属表面处理]