Ⅲ-Ⅴ族纳米线及其异质结构:生长与应用  

Ⅲ-Ⅴ Nanowires and Heterostructures: Growth and Applications

作　　者：颜鑫[1] 张霞[1] 任晓敏[1] YAN Xin;ZHANG Xia;REN Xiaomin(State Key Laboratory of Information Photonics and Optical Communications,Beijing University of Posts and Telecommunications,Beijing 100876,China)

机构地区：[1]北京邮电大学信息光子学与光通信国家重点实验室,北京100876

出　　处：《北京邮电大学学报》2022年第3期1-6,25,共7页Journal of Beijing University of Posts and Telecommunications

基　　金：国家自然科学基金项目(61774021);国家重点研发计划项目(2018YFB2200104);信息光子学与光通信国家重点实验室自主研究项目(IPOC2020ZZ01)。

摘　　要：由于独特的结构特征和新颖的物理特性,Ⅲ-Ⅴ族纳米线一直是半导体光电子学领域的研究热点。近年来,Ⅲ-Ⅴ族纳米线及其异质结构的制备取得了长足的进步,并在新一代激光器、探测器、太阳能电池等光电子器件中展现出巨大的应用潜力。归纳了近期Ⅲ-Ⅴ族纳米线的主要研究进展,包括Ⅲ-Ⅴ族纳米线的可控生长技术、Ⅲ-Ⅴ族纳米线异质结构的制备途径与物理特性、Ⅲ-Ⅴ族纳米线光电子器件的主要进展等,并展望了就该领域的主要挑战和发展方向。Ⅲ-Ⅴ nanowire has been attracting much attention in the field of semiconductor optoelectronics due to the unique structural features and novel physical properties. In recent years, great progress has been made in the fabrication of Ⅲ-Ⅴ nanowires and heterostructures, which has shown great application potential in new-generation optoelectronic devices such as lasers, photodetectors, and solar cells. A review is presented about recent progress on Ⅲ-Ⅴ semiconductor nanowires, including the morphology and crystal structure of Ⅲ-Ⅴ nanowire grown by different methods, the fabrication method and physical properties of Ⅲ-Ⅴ nanowire heterostructures, and the main progress of Ⅲ-Ⅴ nanowire optoelectronic devices. Finally, some light on the main challenges and development directions of this field is shed.

关 键 词：Ⅲ-Ⅴ族纳米线 异质结构 激光器 探测器 太阳能电池 

分 类 号：TN303[电子电信—物理电子学]