Morphology Engineering toward Highly Emissive Mn^(2+)Doped PEA_(2)PbBr_(4) Perovskite with Their LED Application via Phosphonium Passivation  被引量:1

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作  者:Yu-Feng Sang Liang-Jin Xu Zhong-Ning Chen 

机构地区:[1]State Key Laboratory of Structural Chemistry,Fujian Institute of Research on the Structure of Matter,Chinese Academy of Sciences,Fuzhou 350002,China [2]Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China,Fuzhou 350108,China [3]School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210,China

出  处:《Chinese Journal of Structural Chemistry》2022年第5期70-76,共7页结构化学(英文)

基  金:supported by the National Natural Science Foundation of China(Grants 22175181 and 92061202);the Fujian Science and Technology Project(Grant 2020L3022);the Strategic Priority Research Program of Chinese Academy of Sciences(Grant XDB20000000)。

摘  要:Mn^(2+)-doped lead halide perovskites either in 3D or 2D have been extensively explored due to their rich energy-transfer behaviors.While their application on LED is still lagging behind in comparison to non-doped 3D perovskite due to inferior film-formation and low luminescent efficiency.Here we report an in-situ-formed Mn^(2+)doped 2D perovskite nanocrystal(NCs)film by introducing quaternary phosphonium salt during the crystallizing process.The as-formed film shows improved luminescent efficiency with emission peaked at 600 nm and photo-luminescence quantum yield(PLQY)of as high as 73.37%,which is about 1.3 times higher than that of pristine film.Further characterizations confirm the enhanced confinement effect from smaller size particle is responsible for the improved luminescent efficiency.The perovskite LEDs based on pristine and phosphonium passivated thin films were fabricated,and a great improvement in the external quantum efficiency of these LEDs(from 0.0017%to 0.12%)is observed due to the improved morphology and enhanced luminescent efficiency.

关 键 词:2D perovskite Mn^(2+)doped energy transfer perovskite LED 

分 类 号:TB34[一般工业技术—材料科学与工程] TN312.8[电子电信—物理电子学]

 

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