Introducing voids around the interlayer of AlN by high temperature annealing  

作　　者：Jianwei Ben Jiangliu Luo Zhichen Lin Xiaojuan Sun Xinke Liu Xiaohua Li 贲建伟;罗江流;林之晨;孙晓娟;刘新科;黎晓华(College of Materials Science and Engineering,Shenzhen University-Hanshan Normal University Postdoctoral Workstation,Shenzhen University,Shenzhen 518060,China;College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen 518060,China;State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China)

机构地区：[1]College of Materials Science and Engineering,Shenzhen University-Hanshan Normal University Postdoctoral Workstation,Shenzhen University,Shenzhen 518060,China [2]College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen 518060,China [3]State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China

出　　处：《Chinese Physics B》2022年第7期448-453,共6页中国物理B（英文版）

基　　金：the National Key Research and Development Program of China(Grant No.2017YFB0404100);the National Natural Science Foundation of China(Grant Nos.61827813,61974144,and 62004127);the Key Research Program of the Chinese Academy of Sciences(Grant No.XDPB22);the Key-Area Research and Development Program of Guangdong Province,China(Grant Nos.2020B010169001 and 2020B010174003);the Science and Technology Foundation of Shenzhen(Grant No.JSGG20191129114216474)。

摘　　要：Introducing voids into AlN layer at a certain height using a simple method is meaningful but challenging.In this work,the AlN/sapphire template with AlN interlayer structure was designed and grown by metal-organic chemical vapor deposition.Then,the AlN template was annealed at 1700℃for an hour to introduce the voids.It was found that voids were formed in the AlN layer after high-temperature annealing and they were mainly distributed around the AlN interlayer.Meanwhile,the dislocation density of the AlN template decreased from 5.26×10^(9)cm^(-2)to 5.10×10^(8)cm^(-2).This work provides a possible method to introduce voids into AlN layer at a designated height,which will benefit the design of AlN-based devices.

关 键 词：AlN template AlN interlayer voids high-temperature annealing 

分 类 号：TN312.8[电子电信—物理电子学] TQ133.1[化学工程—无机化工]