贻贝启发的偶氮-聚多巴胺涂层用于光电双响应忆阻器件  

Mussel-Inspired Azo-Polydopamine Coating for Photoelectric Dual Response Memristive Device

作　　者：龚明磊 刘铭扬 王潇漾 杨金波 陈彧[1] 张斌[1] GONG Minglei;LIU Mingyang;WANG Xiaoyang;YANG Jinbo;CHEN Yu;ZHANG Bin(Key Laboratory for Advanced Materials,School of Chemistry and Molecular Engineering,East China University of Science and Technology,Shanghai 200237,China;Guangxi Key Laboratory of Information Materials,School of Materials Science and Engineering,Guilin University of Electronic Technology,Guilin 541004,China;Shanghai Yan’an High School,Shanghai 2000336,China)

机构地区：[1]华东理工大学化学与分子工程学院,教育部结构可控先进功能材料及其制备重点实验室,上海200237 [2]桂林电子科技大学材料科学与工程学院,广西电子信息材料构效关系重点实验室,桂林541004 [3]上海市延安中学,上海200336

出　　处：《功能高分子学报》2022年第4期339-348,I0002,共11页Journal of Functional Polymers

基　　金：广西自然科学基金项目(2019GXNSFBA245028);国家自然科学基金(51961145402,51973061)。

摘　　要：高性能忆阻器件的开发适应了大数据时代的需求,尤其是以结构可灵活调变的有机/高分子材料为活性层的新型忆阻器件,正日益成为光电传感和人工智能研究领域的热点。受贻贝灵感化学启发,在蒸镀有氧化铟锡(ITO)的玻璃基底上自组装聚多巴胺(PDA)薄膜形成活性层,随后通过点击化学反应接枝具有光致异构化特性的偶氮苯(Azo),制备了结构为Al/PDAAzo/ITO的忆阻器件。对其结构和电学性能进行的研究结果表明:偶氮苯共价接枝在平整的聚多巴胺表面;器件在施加电压扫描下表现出稳定的非易失性可擦写阻变存储特性,并且电导率在紫外光照射后增加30倍,而在可见光照射后恢复,实现了对电场和光场的双重响应。The development of high-performance memristors meets the needs of the era of big data.In particular,memristors that use organic/polymer materials with flexibly adjustable structures as the active layer are becoming increasingly popular in the field of photoelectric sensing and artificial intelligence.Inspired by mussel-inspired chemistry,a polydopamine(PDA)film was self-assembled on indium tin oxide(ITO)-coated glass substrate to form an active layer,and then grafted azobenzene(Azo)with photoisomerization properties through click chemistry to prepare the memristive device with the structure of Al/PDA-Azo/ITO,and its photoelectric performance has been studied.As a result,Azo molecules are covalently grafted on the surface of polydopamine.The as-prepared device exhibits stable nonvolatile rewritable memory characteristics under applied voltage scanning.The conductivity of the device increases by 30 times after UV light irradiation,and it can be recovered after visible light irradiation,indicating that the fabricated memoristor achieves photoelectric dual response.

关 键 词：聚多巴胺 偶氮苯 光致异构 忆阻器件 光电双响应 

分 类 号：O69[理学—化学] TB34[一般工业技术—材料科学与工程] O633.21