微LED显示基板CMP过程中铜/钛/TEOS的去除速率选择比优化  

Optimization for Removal Rate Selection Ratio of Copper/Titanium/TEOS During CMP of Micro-LED Display Substrate

作　　者：谢顺帆 赵群 梅旭鲲 杨露瑶 何彦刚 Xie Shunfan;Zhao Qun;Mei Xukun;Yang Luyao;He Yangang(Schoolof Electronic and Information Engineering,Hebei University of Technology,Tianjin 300130,China;Tianjin Key Laboratory of Electronic Materials and Devices,Tianjin 300130,China)

机构地区：[1]河北工业大学电子信息工程学院,天津300130 [2]天津市电子材料与器件重点实验室,天津300130

出　　处：《半导体技术》2022年第7期531-538,共8页Semiconductor Technology

基　　金：国家科技重大专项资助项目(2016ZX02301003-004-007);河北省自然科学基金面上项目(F2018202133)。

摘　　要：微LED显示技术因其发光点小、响应速度快等优点而被誉为“终极显示技术”,而芯片加工技术限制了其规模化应用。芯片加工过程中产生的碟形缺陷会严重影响芯片的发光特性和可靠性。采用化学机械抛光(CMP)方法对钛(Ti)作为阻挡层的微显示器基板进行有效的表面平坦化处理,发现引入柠檬酸钾(KCit)可以有效降低碟形缺陷深度。结果表明,在双氧水-柠檬酸钾体系下,可以将铜/钛/正硅酸乙酯(TEOS)去除速率选择比控制在1∶1.9∶1.7,最终修正后的碟型缺陷深度均在20 nm以下,满足工业应用要求。Micro-LED display technology is known as the"ultimate display technology"because of its advantages such as small luminous points and fast response speed.But its large-scale application is limited by chip processing technology.The dish-shaped defects appeared during chip manufacturing can seriously affect the luminescence characteristics and reliability of the chip.Chemical mechanical polishing(CMP)method was used to effectively flatten the surface of the micro-LED substrate with Titanium(Ti)as the barrier layer.It is found that the introduction of potassium citrate(KCit)can effectively reduce the depth of dish-shaped defect.The results show that the removal rate selection ratio of copper/titanium/tetraethyl orthosilicate(TEOS)can be controlled at 1∶1.9∶1.7,and the final corrected dish-shaped defect depth is less than 20 nm in the system of hydrogen peroxide and KCit,which meets the requirements of industrial application.

关 键 词：微LED 铜(Cu) 钛(Ti) 正硅酸乙酯(TEOS) 柠檬酸钾(KCit) 化学机械抛光(CMP) 

分 类 号：TN305.2[电子电信—物理电子学]