一种用于单光子探测器的高速门控淬灭电路  

A High-Speed Gated Quenching Circuit for Single-Photon Detectors

作　　者：王帅康 吴仲 董杰 徐跃[1,2] Wang Shuaikang;Wu Zhong;Dong Jie;Xu Yue(College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications,Nanjing 210023,China;National and Local Joint Engineering Laboratory of RF Integration&Micro-Assembly Technology,Nanjing 210023,China)

机构地区：[1]南京邮电大学集成电路科学与工程学院,南京210023 [2]射频集成与微组装技术国家地方联合工程实验室,南京210023

出　　处：《半导体技术》2022年第7期544-548,共5页Semiconductor Technology

基　　金：国家自然科学基金资助项目(62171233,61571235);江苏省重点研发-社会发展资助项目(BE2019741);江苏省农业科技自主创新资金资助项目(CX(21)3062);江苏省研究生创新计划资助项目(KYCX21_0714)。

摘　　要：提出了一种应用于单光子激光雷达探测器的高速门控淬灭电路,该电路结构简单,仅由3只晶体管及1个与门组成。采用门控的方式能够将雪崩电流快速淬灭,有效抑制暗计数和后脉冲,同时能规避强背底光噪声的干扰。在不增加电路功耗的前提下,通过合理选择复位管和淬灭管的宽长比及电路版图布局,所设计的淬灭电路芯片面积仅有13μm×14μm。基于0.18μm标准CMOS工艺对所设计的电路进行了流片验证,测试结果表明:该电路的淬灭和复位时间分别为1.6 ns和1.4 ns,可应用于高速、高密度单光子探测器。A high-speed gated quenching circuit applied to single-photon lidar detectors was proposed.The structure of the circuit is simple,which consisting of only three transistors and one AND gate.The avalanche current can be quickly quenched by the gated method,as a result that the dark count and afterpulsing are inhibited and the influence of strong background light noise is also avoided.The circuit chip area occupies only 13μm×14μm by reasonably selecting aspect ratios of resetting transistor and quenching transistor and circuit layout without increasing the circuit power consumption.The circuit was fabricated and verified in standard 0.18μm CMOS technology.The test results show that the quenching and resetting time of the circuit are 1.6 ns and 1.4 ns,respectively.Therefore,the proposed gated quenching circuit is suitable for high-speed and high-density single-photon detectors.

关 键 词：单光子雪崩二极管(SPAD) 盖革模式 复位时间 淬灭时间 门控淬灭电路 

分 类 号：TN432[电子电信—微电子学与固体电子学]