SiC MOSFET直流固态断路器短路特性及保护电路  

Short-Circuit Characteristics and Protection Circuit of SiC MOSFET DC Solid State Circuit Breakers

作　　者：田明玉 任宇 田世鹏 谭羽辰 Tian Mingyu;Ren Yu;Tian Shipeng;Tan Yuchen(College of Electrical and Pouer Engineering,Taiyuan University of Technology,Taiyuan 030024,China)

机构地区：[1]太原理工大学电气与动力工程学院,太原030024

出　　处：《半导体技术》2022年第7期554-563,569,共11页Semiconductor Technology

摘　　要：为了提高用于直流微电网的SiC MOSFET固态断路器(SSCB)的可靠性,对其在较大电感条件下的短路特性和短路保护电路进行了研究。首先对SSCB短路电流分断过程进行了分析,给出了金属氧化物压敏电阻(MOV)的选型依据。在此基础上通过实验研究了不同直流母线电压、不同功率器件结温和不同故障电感下SSCB的短路特性,揭示了SSCB的短路失效模式,分析了SSCB短路电流分断能力的影响因素。设计了基于现场可编程门阵列(FPGA)的电压源型退饱和保护电路,并制作了样机。实验结果表明,所设计的退饱和保护电路实现了短路保护的快速响应,响应时间为593 ns,可有效保护SSCB中的SiC MOSFET。To improve the reliability of SiC MOSFET solid state circuit breakers(SSCBs)used in DC microgrids,the short-circuit characteristics and short-circuit protection circuit of the SSCB under larger inductance condition were studied.Firstly,the SSCB short-circuit current breaking process was analyzed,and the selection basis of metal oxide varistor(MOV)was given.On the basis,the short-circuit characteristics of the SSCB under different DC bus voltages,different power device junction temperatures and different fault inductances were experimentally studied.The short-circuit failure modes of the SSCB were revealed,and the influencing factors of the SSCB short-circuit current breaking capacity were analyzed.The voltage source type desaturation protection circuit based on field programmable gate array(FPGA)was designed,and a prototype was built.The experimental results show that the designed desaturation protection circuit can realize a fast response of the short-circuit protection with a response time of 593 ns,which can effectively protect the SiC MOSFET in the SSCB.

关 键 词：SiC MOSFET 固态断路器(SSCB) 短路特性 退饱和保护 短路电流分断能力 

分 类 号：TN432[电子电信—微电子学与固体电子学]