GaAs HBT低噪声放大器的Pspice模型预测与分析  

Pspice Model Prediction and Analysis of GaAs HBT Low Noise Amplifier

作　　者：吴健煜 吴建飞 杜传报 毛从光[3] 郑亦菲 张红丽 WU Jianyu;WU Jianfei;DU Chuanbao;MAO Congguang;ZHENG Yifei;ZHANG Hongli(College of Electronic Science,National University of Defense Technology,Changsha 410073,China;Tianjin Institute of Advanced Technology,Tianjin 300459,China;Northwest Institute of Nuclear Technology,Xi’an 710024,China)

机构地区：[1]国防科技大学电子科学学院,长沙410073 [2]天津先进技术研究院,天津300459 [3]西北核技术研究所,西安710024

出　　处：《现代应用物理》2022年第2期16-23,共8页Modern Applied Physics

基　　金：航天产学研合作基金资助项目(SASP2021-069)。

摘　　要：针对传统模型因芯片封装无法利用矢量网络分析仪提取散射参数进行建模仿真的问题,对传统模型预测方法进行了改进。对一款GaAs异质结双极型晶体管(heterojunction bipolar transistor,HBT)低噪声放大器(low noise amplifier,LNA)进行建模,利用低噪声放大器测量出不同外加电压条件下的I-V曲线,分析了放大器内部器件的通路情况,推算出本征参数与寄生参数,然后利用Pspice仿真软件确定参数对增益的影响,通过调整增益曲线并根据仿真结果选择最佳取值,得到了和实际测试值相吻合的曲线。对比结果表明,仿真结果与实测结果符合较好。To solve the problem that the traditional model can not extract the scattering parameters by vector network analyzer for modeling and simulation due to chip packaging,the traditional model prediction method is improved in this paper.A low noise amplifier(LNA)of GaAs heterojunction bipolar transistor(HBT)is modeled.The I-V curves of the LNAunder different applied voltages are measured.The path conditions of the internal devices of the amplifier are analyzed,and the intrinsic and parasitic parameters are calculated.Then the influence of the parameters on the gain is determined by Pspice simulation software.By adjusting the gain curve and using the simulation results,the best value consistent with the actual test value is obtained.The comparison results show that the simulation results are in good agreement with the measured ones.

关 键 词：低噪声放大器 电路建模 Pspice模型预测 异质结双极性晶体管 

分 类 号：O45[理学—无线电物理] TN722[理学—物理]