基于EBG封装技术的E波段功率合成放大器研究  

Research of E-band Power Combining Amplifiers Based on EBG Packaging Technology

作　　者：吉小莹 朱翔 孙健健 成海峰[1] JI Xiaoying;ZHU Xiang;SUN Jianjian;CHENG Haifeng(Nanjing Electronic Device Institute Nanjing,210016,CHN;State Key Laboratoryo Millimeler Wave Souheast Universily,Nanjing,210096,CHN)

机构地区：[1]南京电子器件研究所,南京210016 [2]东南大学毫米波国家重点实验室,南京210096

出　　处：《固体电子学研究与进展》2022年第3期170-176,共7页Research & Progress of SSE

摘　　要：基于过模波导功率合成技术及电磁带隙(EBG)的封装结构,设计并制作了工作在71~76 GHz、81~86 GHz的两款4路E波段功率合成放大器。设计的波导T型结功分/合成结构将标准波导通过阶梯渐变波导转换至过模波导,降低了高频功率合成器的加工难度,实现了E波段高效功率合成。设计了周期性金属销钉形成的EBG结构,抑制了金属腔体在高频时产生的谐振模式和平行板模式,提高了腔体的隔离度,实现了高频功率器件的封装。研制的两款固态功率放大器经测试,在71~76 GHz和81~86 GHz范围内,合成功率典型值为8.5 W和7.9 W,典型电源转换效率为12.1%和14.4%,两款功放的T型结合成效率都超过92%。Based on overmode waveguide power combining technology and the electromagnetic band gap(EBG)structure,two 4-channel E-band power combining amplifiers operating in 71-76 GHz and 81-86 GHz were designed and fabricated in this paper.The waveguide T-type power splitter/combiner converts the standard waveguide to overmode waveguide through stepwise gradient waveguide,which solves the problem of machining difficulty and realizes the efficient power combining of E-band solid amplifier.The electromagnetic band gap(EBG)structure formed by periodic metal pin can effectively suppress the resonant mode and andante mode that may occur in the cavity at high frequency,effectively improve the isolation degree of the cavity and realize the valid package of high frequency power device. The test results show that the typical output power is 8.5 W and 7.9 W in the frequency range of 71 to 76 GHz and 81 to 86 GHz respectively,and the typical PAE is 12.1% and 14.4%. The T-junction synthesis efficiency of both power amplifiers exceeds 92%.

关 键 词：E波段 功率分配、合成器 电磁带隙结构 固态功率放大器 

分 类 号：TN72[电子电信—电路与系统]