InP/InGaP/GaAsSb/InGaAsSb/InP双异质结双极晶体管设计  

Design of InP/InGaP/GaAsSb/InGaAsSb/InP Double Heterojunction Bipolar Transistors

作　　者：刘涛 刘燚 王冯涛 LIU Tao;LIU Yi;WANG Fengtao(College of Physics and Electronic Engineering,Qujing Normal Universily,Qujing,Yunman,655011,CHN)

机构地区：[1]曲靖师范学院物理与电子工程学院,云南曲靖655011

出　　处：《固体电子学研究与进展》2022年第3期184-190,219,共8页Research & Progress of SSE

基　　金：云南省基础研究项目(210301004);国家级大学生创新创业训练重点项目(20200108Z)。

摘　　要：应用半导体器件的电阻电容计算理论和SILVACO ATLAS软件,在综合考虑载流子渡越时间和电阻电容延迟时间对增益截止频率的影响下设计了一种InP/InGaP/GaAsSb/InGaAsSb/InP双异质结双极晶体管(DHBT)结构。该结构中在基区与发射区之间加入P型半导体层以降低基区与发射区之间的电子势垒,并通过引入梯度渐变材料及优化掺杂分布提高基区电场、增强集电区中易趋近于零区域的电场,器件的电流增益截止频率得到显著提升。此外,还列出了InGaP和InGaAsSb材料的禁带宽度和电子亲合势、P型GaAs_(0.51)Sb_(0.49)和InGaAsSb材料的电子迁移率的近似计算公式。By application of the resistance and capacitance calculation theory of semiconductor devices and the SILVACO ATLAS software,an InP/InGaP/GaAsSb/InGaAsSb/InP double heterojunction bipolar transistor(DHBT)epitaxial layer structure was designed under the comprehensive consideration of the carriers transit time and the resistance-capacitance delay time on the current gain cut-off frequency.In the structure,it is proposed to reduce the electronic barrier by adding a P-type semiconductor layer between the base region and the emitter region.The electric field in the base region is enhanced,and the built-in field at the location where it will tend toward zero under high current density operation is preconditioned to be higher by introducing gradient materials and optimizing the doping distribution.In addition,the approximate calculation formulas for the band gap and electron affinity of InGaP and InGaAsSb materials,and the electron mobility of P-type GaAs_(0.51)Sb_(0.49) and InGaAsSb materials are listed.

关 键 词：双异质结双极晶体管(DHBT) InP/InGaP/GaAsSb/InGaAsSb/InP 渐变材料 梯度掺杂 

分 类 号：TN304.26[电子电信—物理电子学]