4H-SiC深槽刻蚀及其形貌的改善  

Deep Etching and Morphology Improvement of 4H-SiC

作　　者：董志华 刘辉 曾春红[2] 张璇 孙玉华[2] 崔奇 程知群[1] 张宝顺[2] DONG Zhihua;LIU Hui;ZENG Chunhong;ZHANG Xuan;SUN Yuhua;CUI Qi;CHENG Zhiqun;ZHANG Baoshun(School of Electronic Information,Hangzhou Dianzi University,Hangzhou,310018,CHN;Nanofabrication facility,Suzhou Institute of Nano Tech and Nano Bionics,Chinese Academy of Sciences,Suzhou,Jiangsu 215123,CHN)

机构地区：[1]杭州电子科技大学电子信息学院,杭州310018 [2]中国科学院苏州纳米技术与纳米仿生研究所,江苏苏州215123

出　　处：《固体电子学研究与进展》2022年第3期239-243,共5页Research & Progress of SSE

基　　金：国家自然科学基金青年科学基金资助课题(61804166)。

摘　　要：采用磁中性环路放电(NLD)等离子体刻蚀装置对4H-SiC进行深槽刻蚀。研究了偏置电源功率和反应腔室压强对深槽中微沟槽效应和侧壁粗糙度的影响。实验发现:提高偏置电源功率和腔室压强可以消除深槽中的微沟槽效应,并且提高腔室压强还可以改善深槽侧壁的粗糙度。分析了其中的刻蚀机理,实验结果和分析对研究SiC深槽刻蚀具有一定的指导意义。In this paper,a neutral loop discharge(NLD)plasma etching device was used to etch the deep trench of 4H-SiC. The influence of RF bias power and chamber pressure on the microtrenching and the roughness of deep trench sidewall were studied. The experimental results show that the microtrenching effect in deep trench can be reduced by increasing RF bias power and chamber pressure,and the sidewall roughness can be reduced by increasing chamber pressure. The etching mechanism is analyzed,and the experimental results and analysis have a certain guiding significance for the study of SiC deep trench etching.

关 键 词：碳化硅 深刻蚀 微沟槽 侧壁粗糙度 

分 类 号：TN304[电子电信—物理电子学]