Temperature dependence of LiNbO3 dislocation density in the near-surface layer  

作　　者：Oksana Semenova Aleksei Sosunov Nikolai Prokhorov Roman Ponomarev 

机构地区：[1]Department of Nanotechnology and Microsystems Engineering,Perm State University,Perm 614990,Russia [2]Perm Federal Research Center of the Ural Branch of the Russian Academy of Sciences,Perm 614990,Russia

出　　处：《Chinese Optics Letters》2022年第6期40-46,共7页中国光学快报（英文版）

基　　金：funded by state assignment No.121101300016-2。

摘　　要：Density of dislocations in the near-surface layer was investigated in X-cut LiNbO_(3) depending on thermal annealing in the temperature range of 400℃–600℃.A dynamic model of randomly distributed dislocations has been developed for LiNbO_(3) by using X-ray diffraction.The experimental results showed that the dislocation density of the near-surface layer reached the minimum at the thermal annealing temperature of 500℃,with the analysis being performed when wet selective etching and X-ray diffraction methods were used.We concluded that homogenization annealing is an effective technique to improve the quality of photonic circuits based on LiNbO_(3).The results obtained are important for optical waveguides,LiNbO_(3)-on-insulator-based micro-photonic devices,electro-optical modulators,sensors,etc.

关 键 词：lithium niobate etching pits near-surface layer density of dislocations annealing X-ray diffraction 

分 类 号：O772[理学—晶体学] TN25[电子电信—物理电子学]