应变补偿多量子阱结构半导体可饱和吸收镜  

Strain-Compensated Multiquantum Well Structure Semiconductor Saturable Absorber Mirror

作　　者：林楠[1,2] 仲莉 黎海明[3] 马骁宇 熊聪 刘素平[1] 张志刚 Lin Nan;Zhong Li;Li Haiming;Ma Xiaoyu;Xiong Cong;Liu Suping;Zhang Zhigang(National Engineering Research Center for Optoelectronic Devices,Institute of Semiconductor,Chinese Academy of Sciences,Beijing 100083,China;College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China;Guangdong Huakuai Photonics Technology Co.,Ltd.,Zhongshan 528436,Guangdong,China;School of Electronics Engineering and Computer Science,Peking University,Beijing 100871,China)

机构地区：[1]中国科学院半导体研究所光电子器件国家工程研究中心,北京100083 [2]中国科学院大学材料科学与光电技术学院,北京100049 [3]广东华快光子科技有限公司,广东中山528436 [4]北京大学信息科学技术学院,北京100871

出　　处：《中国激光》2022年第11期11-20,共10页Chinese Journal of Lasers

摘　　要：应用于掺镱(Yb)光纤激光器的半导体可饱和吸收镜(SESAM)需要具有较高的调制深度,即将较厚的砷化铟镓(InGaAs)材料作为吸收层。然而,InGaAs材料与砷化镓(GaAs)衬底之间的大失配,导致过厚的InGaAs材料质量极易恶化,影响锁模效果。因此,优化的外延结构设计和高质量的外延材料成为研制高性能SESAM的关键。本文设计了吸收层InGaAs材料总厚度分别为150 nm和300 nm的两种应变补偿多量子阱(MQW)结构的SESAM,利用金属有机化合物气相沉积(MOCVD)方法进行外延材料生长,采用光致发光光谱仪、高分辨X射线衍射仪和分光光度计对外延材料特性进行表征,优化外延材料生长参数。将研制的两种SESAM应用到线型腔掺Yb光纤激光器中,实现稳定锁模的泵浦功率分别为130 mW和120 mW,输出激光脉宽分别为18.3 ps和9.6 ps。实验结果表明,吸收层InGaAs材料厚度为300 nm的SESAM更容易实现稳定锁模并获得脉宽较窄的激光脉冲输出。Objective A semiconductor saturable absorber mirror(SESAM)has the advantages of self-starting,easy integration,wide wavelength coverage,support for all-solid-state laser technology,fast saturation,compact structure,and flexible design.It has become a Q-switched and mode-locked element for various types of lasers such as solid-state,fiber,and semiconductor lasers.Recently,the rapid development of picosecond Yb-doped fiber lasers and their wide application in industrial processing has heightened interest in SESAM applied to Yb-doped fiber lasers.However,domestic research on SESAM devices is mostly focused on solid-state lasers.Most studies on SESAM for fiber lasers focus on its application system,and there are few reports on the development process of SESAM for fiber lasers and the characterization of crucial epitaxial material features.Thus,the structural design of SESAM,epitaxial material growth process parameters,and characterization of key material properties reported in this study have important reference values for further SESAM research.Methods Because the InGaAs quantum well layer developed on GaAs substrate is compressed,the entire In0.25Ga0.75As/GaAs multiquantum well(MQW)has a large compressive strain,which leads to the deterioration of the quality of the thick InGaAs material and affects the mode-locking effect of SESAM devices.Simultaneously,the number of MQW cycles will be limited by strain relaxation.Two kinds of strain compensated InGaAs/GaAsP MQW SESAMs with total thicknesses of 150and 300nm are designed in this study.The tensile strain of the GaAsP quantum barrier is employed to compensate for the compressive strain of InGaAs quantum well,resulting in not only superior epitaxial material but also an increase in the number of MQW cycles.The epitaxial materials are grown by metal-organic compound vapor deposition(MOCVD).The characteristics of the epitaxial materials are described using photoluminescence spectroscopy,high-resolution X-ray diffraction,and a spectrophotometer.The growth parameters of e

关 键 词：激光器 超快激光器 半导体可饱和吸收镜 金属有机化合物气相沉积 应变补偿多量子阱结构 

分 类 号：TN248.1[电子电信—物理电子学]