基于先进工艺节点下标准单元引脚可达性的优化研究  

Pin Accessibility Optimization of Standard Cells in Advanced Technology Nodes

作　　者：蔡燕飞 CAI Yan-fei(Department of Design Service, Semiconductor Manufacturing International Corporation (Shanghai))

机构地区：[1]中芯国际集成电路制造(上海)有限公司

出　　处：《中国集成电路》2022年第7期55-59,86,共6页China lntegrated Circuit

摘　　要：传统的平面型金属-氧化物-半导体场效应晶体管(Metal-Oxide-Semiconductor Field-Effect Transistor,MOSFET)由于短沟道效应已经无法满足集成电路技术的飞速发展,而鳍式场效应晶体管(Fin Field-Effect Transistor,FinFET)的沟道具有三维立体结构,在先进工艺下展现出了良好的性能。然而,复杂的工艺规则和庞大的引脚数量使得标准单元的引脚可达性成为先进工艺节点中后端物理设计的难题之一。本文提出了一种高效的定制化方案,通过合理地推移来自动修正设计规则违规的标准单元,从而实现了整体的引脚可达性。实验结果表明,经过两轮迭代,第二层金属(Metal2)的违规数量大幅度下降,减少了约98.0%,且在相同的物理环境下,运行时间并无增长。也就是说,该方法可以大幅度提高后端物理设计的效率。The integrated circuit develops so rapidly that the conventional planar metal-oxide-semiconductor field-effect transistor(MOSFET)couldn’t meet its growing requirements due to the short channel effect.The fin field-effect transistor(FinFET)with three-dimensional structures exhibits excellent performance when its channel is scaled down to <14 nm,and thus can be the substitute in advanced technology nodes.However,the extremely complex design rule and high pin density make the standard cell pin accessibility in advanced process technology one of the most difficult challenges during back-end physical design.In this paper,an efficient strategy is proposed to deal with design rule check violations and to realize pin accessibility by easy standard cell shifting.Experimental results show that the design rule check violation amounts of Metal2 decrease by 98.0% after two-time iterations with no increase in run time under the same physical circumstances.This customized strategy provides the possibility for fixing the design rule check violations automatically and guarantees the close-to-100% pin accessibility to ensure feasible manual fixing after the placement and routing.

关 键 词：鳍式场效应晶体管 自动布局布线 引脚可达性 设计规则检查 

分 类 号：TN386[电子电信—物理电子学]