Silicon nitride passive and active photonic integrated circuits:trends and prospects  

作　　者：CHAO XIANG WARREN JIN JOHN E.BOWERS 

机构地区：[1]Department of Electrical and Computer Engineering,University of California,Santa Barbara,Santa Barbara,California 93106,USA

出　　处：《Photonics Research》2022年第6期I0001-I0015,共15页光子学研究（英文版）

基　　金：Defense Advanced Research Projects Agency(HR0011-15-C-055,HR0011–19-C-0083,HR0011-22-2-0009,HR001-20-2-0044)。

摘　　要：The use of silicon nitride in integrated photonics has rapidly progressed in recent decades.Ultra-low-loss waveguides based on silicon nitride are a favorable platform for the research of nonlinear and microwave photonics and their application to a wide variety of fields,including precision metrology,communications,sensing,imaging,navigation,computation,and quantum physics.In recent years,the integration of Si and Ⅲ-Ⅴ materials has enabled new large-scale,advanced silicon nitride-based photonic integrated circuits with versatile functionality.In this perspective article,we review current trends and the state-of-the-art in silicon nitride-based photonic devices and circuits.We highlight the hybrid and heterogeneous integration of Ⅲ-Ⅴ with silicon nitride for electrically pumped soliton microcomb generation and ultra-low-noise lasers with fundamental linewidths in the tens of m Hz range.We also discuss several ultimate limits and challenges of silicon nitride-based photonic device performance and provide routes and prospects for future development.

关 键 词：PASSIVE PUMPED NITRIDE 

分 类 号：TN432[电子电信—微电子学与固体电子学] TN256