High-performance modified uni-traveling carrier photodiode integrated on a thin-film lithium niobate platform  

作　　者：XIANGWEN GUO LINBO SHAO LINGYAN HE KEVIN LUKE JESSE MORGAN KEYE SUN JUNYI GAO TA-CHING TZU YANG SHEN DEKANG CHEN BINGTIAN GUO FENGXIN YU QIANHUAN YU MASOUD JAFARI MARKO LONčAR MIAN ZHANG ANDREAS BELING 

机构地区：[1]Department of Electrical and Computer Engineering,University of Virginia,Charlottesville,Virginia 22903,USA [2]John A.Paulson School of Engineering and Applied Sciences,Harvard University,Cambridge,Massachusetts 02138,USA [3]HyperLight Corporation,Cambridge,Massachusetts 02139,USA

出　　处：《Photonics Research》2022年第6期1338-1343,共6页光子学研究（英文版）

基　　金：National Science Foundation(2023775);Air Force Office of Scientific Research(FA 9550-17-1-0071);Defense Advanced Research Projects Agency(HR0011-20-C-0137)。

摘　　要：Lithium niobate on insulator(LNOI)has become an intriguing platform for integrated photonics for applications in communications,microwave photonics,and computing.Whereas,integrated devices including modulators,resonators,and lasers with high performance have been recently realized on the LNOI platform,high-speed photodetectors,an essential building block in photonic integrated circuits,have not been demonstrated on LNOI yet.Here,we demonstrate for the first time,heterogeneously integrated modified uni-traveling carrier photodiodes on LNOI with a record-high bandwidth of 80 GHz and a responsivity of 0.6 A/W at a 1550-nm wavelength.The photodiodes are based on an n-down In GaAs/InP epitaxial layer structure that was optimized for high carrier transit time-limited bandwidth.Photodiode integration was achieved using a scalable wafer die bonding approach that is fully compatible with the LNOI platform.

关 键 词：TRAVELING performance MODIFIED 

分 类 号：TN15[电子电信—物理电子学]