Simulation of MoS_(2)stacked nanosheet field effect transistor  

作　　者：Yang Shen He Tian Tianling Ren 

机构地区：[1]School of Integrated Circuits and Beijing National Research Center for Information Science and Technology(BNRist),Tsinghua University,Beijing 100084,China

出　　处：《Journal of Semiconductors》2022年第8期41-45,共5页半导体学报（英文版）

基　　金：supported in part by National Natural Science Foundation of China under Grant 62022047,Grant 61874065,Grant U20A20168 and Grant 51861145202;in part by the National Key R&D Program under Grant 2021YFC3002200 and Grant 2020YFA0709800;in part by Fok Ying-Tong Education Foundation under Grant 171051;in part by Beijing Natural Science Foundation(M22020);in part by Beijing National Research Center for Information Science and Technology Youth Innovation Fund(BNR2021RC01007);in part by State Key Laboratory of New Ceramic and Fine Processing Tsinghua University(No.KF202109);in part by Tsinghua-Foshan Innovation Special Fund(TFISF)(2021THFS0217);in part by the Research Fund from Beijing Innovation Center for Future Chip;the Independent Research Program of Tsinghua University under Grant 20193080047;supported by the Opening Project of Key Laboratory of Microelectronic Devices&Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences.

摘　　要：Transition metal dichalcogenides are nowadays appealing to researchers for their excellent electronic properties.Vertical stacked nanosheet FET(NSFET)based on MoS_(2)are proposed and studied by Poisson equation solver coupled with semiclassical quantum correction model implemented in Sentaurus workbench.It is found that,the 2D stacked NSFET can largely suppress short channel effects with improved subthreshold swing and drain induced barrier lowering,due to the excellent electrostatics of 2D MoS_(2).In addition,small-signal capacitance is extracted and analyzed.The MoS_(2)based NSFET shows great potential to enable next generation electronics.

关 键 词：MoS_(2) stacked nanosheet GAA TCAD simulation 

分 类 号：TN386[电子电信—物理电子学]