Research on quantum well intermixing of 680 nm AlGaInP/GaInP semiconductor lasers induced by composited Si-Si_(3)N_(4) dielectric layer  

作　　者：Tianjiang He Suping Liu Wei Li Cong Xiong Nan Lin Li Zhong Xiaoyu Ma 

机构地区：[1]National Engineering Research Center for Optoelectronic Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]College of Materials Science and Optoelectronics,University of Chinese Academy of Sciences,Beijing 100049,China

出　　处：《Journal of Semiconductors》2022年第8期46-52,共7页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(NNSFC)(Grant No.62174154).

摘　　要：The optical catastrophic damage that usually occurs at the cavity surface of semiconductor lasers has become the main bottleneck affecting the improvement of laser output power and long-term reliability.To improve the output power of 680 nm AlGaInP/GaInP quantum well red semiconductor lasers,Si-Si_(3)N_(4)composited dielectric layers are used to induce its quantum wells to be intermixed at the cavity surface to make a non-absorption window.Si with a thickness of 100 nm and Si_(3)N_(4)with a thickness of 100 nm were grown on the surface of the epitaxial wafer by magnetron sputtering and PECVD as diffusion source and driving source,respectively.Compared with traditional Si impurity induced quantum well intermixing,this paper realizes the blue shift of 54.8 nm in the nonabsorbent window region at a lower annealing temperature of 600 ℃ and annealing time of 10 min.Under this annealing condition,the wavelength of the gain luminescence region basically does not shift to short wavelength,and the surface morphology of the whole epitaxial wafer remains fine after annealing.The application of this process condition can reduce the difficulty of production and save cost,which provides an effective method for upcoming fabrication.

关 键 词：high power semiconductor laser rapid thermal annealing composited dielectric layer quantum well intermixing optical catastrophic damage nonabsorbent window 

分 类 号：TN248.4[电子电信—物理电子学]