A low-power high-quality CMOS image sensor using 1.5 V 4T pinned photodiode and dual-CDS column-parallel single-slope ADC  

作　　者：Wenjing Xu Jie Chen Zhangqu Kuang Li Zhou Ming Chen Chengbin Zhang 

机构地区：[1]Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China [2]University of Chinese Academy of Sciences,Beijing 100049,China [3]Will Semiconductor Co.Ltd.,Shanghai 201210,China

出　　处：《Journal of Semiconductors》2022年第8期53-59,共7页半导体学报（英文版）

基　　金：supported by the National Key R&D Program of China(2019YFB2204304).

摘　　要：This paper presents a low-power high-quality CMOS image sensor(CIS)using 1.5 V 4T pinned photodiode(4T-PPD)and dual correlated double sampling(dual-CDS)column-parallel single-slope ADC.A five-finger shaped pixel layer is proposed to solve image lag caused by low-voltage 4T-PPD.Dual-CDS is used to reduce random noise and the nonuniformity between columns.Dual-mode counting method is proposed to improve circuit robustness.A prototype sensor was fabricated using a 0.11μm CMOS process.Measurement results show that the lag of the five-finger shaped pixel is reduced by 80%compared with the conventional rectangular pixel,the chip power consumption is only 36 mW,the dynamic range is 67.3 dB,the random noise is only 1.55 e^(-)_(rms),and the figure-of-merit is only 1.98 e^(-)·nJ,thus realizing low-power and high-quality imaging.

关 键 词：CMOS image sensor 4T pinned photodiode single-slope ADC correlated double sample counting method 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]