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作 者:单心怡 朱世杰 汪舟 林润泽 崔旭高[1] 方志来 顾而丹 田朋飞 SHAN Xinyi;ZHU Shijie;WANG Zhou;LIN Runze;CUI Xugao;FANG Zhilai;GU Erdan;TIAN Pengfei(School of Information Science and Engineering,Fudan University,Shanghai 200438,CHN)
机构地区:[1]复旦大学信息科学与工程学院,上海200438
出 处:《半导体光电》2022年第3期444-450,共7页Semiconductor Optoelectronics
基 金:国家重点研发计划项目(2021YFB3601000,2021YFB3601003,2021YFE0105300);国家自然科学基金项目(61974031);上海市科学技术委员会项目(21511101303);江苏省重点研发计划(产业前瞻与关键核心技术)项目(BE2021008-2)。
摘 要:GaN基micro-LED阵列作为新兴的光源技术,已被证明可以在光通信及显示等领域发挥重要作用。如果阵列中的micro-LED能够探测毗邻区域像素的发光性能,将有望形成单片集成发光探测的多功能micro-LED阵列,从而推进未来物联网技术中满足小型化、低功耗需求的光子集成芯片的发展。文章通过实验验证了InGaN/GaN多量子阱结构可以在不同偏压下实现发光和探测的双重功能,从而证明了micro-LED阵列单片集成发光和实时探测的可行性,并进一步将其应用于高稳定性可见光通信以及显示阵列坏点实时检测中,拓宽了micro-LED阵列集成发光探测多功能的潜在应用领域。GaN-based micro-LED,as a burgeoning light source technology,has been demonstrated to play an important role in optical communication and display fields,etc.If the pixels in micro-LED array can detect the optical performance of the adjacent pixels,it is expected to realize multifunctional micro-LED array for monolithic integration with light detection,thus promoting the development of photonic integrated chips for Internet of Things technology toward miniaturization and low power consumption.It was experimentally verified that InGaN/GaN MQWs can realize the dual functions of luminescence and detection under different operating voltages,thus proving the feasibility of micro-LED array monolithic integrated luminescence and real-time detection.Moreover,micro-LED array was further applied in high stability visible light communication and real-time detection of dead pixels in display array,which broadens the potential applications of micro-LED array.
分 类 号:TN929.1[电子电信—通信与信息系统] TN312.8[电子电信—信息与通信工程]
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