通过双中温AlN插入层提高半极性(1122)面AlN薄膜的表面形貌和晶体质量  

Effects of Thickness of Dual Moderate-Temperature-Grown AlN Interlayers on Surface Morphology and Crystalline Quality of Semi-Polar(1122)AlN Epilayer

作　　者：崔佳 罗旭光 张雄[1] 崔一平[1] CUI Jia;LUO Xuguang;ZHANG Xiong;CUI Yiping(Advanced Photonics Center,Southeast University,Nanjing 210096,CHN)

机构地区：[1]东南大学先进光子学中心,南京210096

出　　处：《半导体光电》2022年第3期505-509,共5页Semiconductor Optoelectronics

基　　金：江苏省科技部重点研发项目(2021008-4);国家重点研发计划项目(2018YFE0201000);中央高校基础研究基金项目(2242022K30047,2242022K30048)。

摘　　要：利用金属有机化学气相沉积方法在蓝宝石衬底上生长了一系列具有双中温AlN插入层(MTG-AlN)的半极性AlN薄膜样品。中温生长的AlN插入层具有较大的表面粗糙度,形成了类似纳米级图形化衬底结构,能够有效阻断高温生长的半极性AlN样品中堆垛层错的传播,从而提高半极性AlN样品的表面形貌和晶体质量。通过原子力显微镜和X射线衍射仪的表征,研究了MTG-AlN插入层厚度在20~100 nm之间的变化对半极性AlN样品的表面形貌和晶体质量的影响。结果表明,所有半极性AlN样品都具有(1122)取向。当插入的MTG-AlN中间层厚度约为80 nm时,半极性AlN样品表面粗糙度显著降低,晶体质量明显改善。A series of semi-polar(1122)AlN epilayers have been grown on(1122)sapphire substrates with the help of dual moderate-temperature-grown(MTG)AlN interlayers by metal-organic chemical vapor deposition(MOCVD).Significant improvements in both surface morphology and crystalline quality of the semi-polar(1122)AlN epilayers have been achieved with the insertion of the MTG-AlN interlayers due to the formation of nano-scale patterned substrate-like structure and the reduction in the basal-plane stacking faults and their associated partial dislocations.The effect of the variation in the thickness of the MTG-AlN interlayer ranged from 20 to 100 nm was investigated in detail based on the characterization results of atomic force microscopy(AFM)and X-ray diffraction.It was revealed that all the semi-polar AlN epilayer samples were uniquely(1122)-oriented regardless of the variation in the thickness of the MTG AlN interlayer.It was found that the most remarkable reduction in surface roughness and the most notable improvement in crystalline quality could be obtained when the thickness for the inserted dual MTG-AlN interlayers was approximately 80 nm.

关 键 词：双中温AlN插入层 半极性AlN 表面形貌 晶体质量 

分 类 号：TQ133.1[化学工程—无机化工] TN312.8[电子电信—物理电子学]