小像元InSb红外焦平面器件光电性能仿真  

Photoelectric Performance Simulation of Small-Pixel InSb Infrared Focal Plane Devices

作　　者：朱旭波[1,2,3] 李墨 何英杰[1,2,3] 吕衍秋 Zhu Xubo;Li Mo;He Yingjie;LüYanqiu(China Airborne Missile Academy,Luoyang 471009,China;Aviation Key Laboratory of Science and Technology on Infrared Detector,Luoyang 471009,China;Henan Antimonide Infrared Detector Engineer Technology Center,Luoyang 471009,China)

机构地区：[1]中国空空导弹研究院,河南洛阳471009 [2]红外探测器技术航空科技重点实验室,河南洛阳471009 [3]河南省锑化物红外探测器工程技术研究中心,河南洛阳471009

出　　处：《航空兵器》2022年第3期61-65,共5页Aero Weaponry

基　　金：航空科学基金项目(201924012003)。

摘　　要：小像元是InSb红外焦平面器件制备的发展方向之一,但其会对器件的光电流响应和串音产生很大影响。因此使用Sentaurus TCAD软件建立了小像元InSb红外焦平面阵列器件的台面结器件模型、平面结器件模型和外延结构器件模型,采用背照射的3个像素单元的InSb阵列器件仿真了3种器件结构的光电流响应和串音。结果表明,台面结器件和平面结器件可以通过减小器件厚度和增加结深的方法来增加光电流响应和减少串音;外延结构器件可以通过增加吸收层厚度和选择合适的掺杂浓度来改善光电流响应和串音。综合考虑工艺难度影响,对小像元InSb红外焦平面阵列器件,建议采用深离子注入的平面结结构和采用分子束外延制备的厚度和掺杂浓度可控的外延结构。Small-pixel is one of the development directions of InSb infrared focal plane devices,but it will have a greater impact on the photocurrent response and crosstalk of the device.Therefore,the mesa junction device model,the planar junction device model and the epitaxial device model of the small-pixel InSb infrared focal plane array device are established using Sentaurus TCAD software.The back-incident three-pixel InSb array devices are used to simulate the photocurrent response and crosstalk of the three device models.The results show that the photocurrent response can be increased and the crosstalk can be reduced for the mesa junction device and the planar junction device by reducing device thickness and increasing junction depth,and the photocurrent response and crosstalk can be improved for the epitaxial InSb device by increasing the thickness of absorption layer and selecting an appropriate doping concentration.Considering the influence of process difficulty,it is re-commended to adopt a deep ion implanted planar junction structure or an epitaxial structure with controllable thickness and doping concentration prepared by molecular beam epitaxy.

关 键 词：INSB 小像元 红外探测器 电流响应率 串音 Sentaurus TCAD 

分 类 号：TJ760.1[兵器科学与技术—武器系统与运用工程] TN215[电子电信—物理电子学]