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作 者:Jiangyue Su Ran Pang Haiyan Wu Shangwei Wang Tao Tan Weihong Yuan Su Zhang Lihong Jiang Da Li Chengyu Li Hongjie Zhang
机构地区:[1]State Key Laboratory of Rare Earth Resource Utilization,Changchun Institute of Applied Chemistry,Chinese Academy of Sciences,Changchun 130022,China [2]University of Science and Technology of China,Hefei 230026,China [3]Zhongke Rare Earth(Changchun)Co.,Ltd.,Changchun 130000,China [4]The GBA National Institute for Nanotechnology Innovation,Guangzhou 510535,China
出 处:《Journal of Rare Earths》2022年第7期1014-1021,共8页稀土学报(英文版)
基 金:Project supported by the National Key R&D Program of China(2019YFA0709101);National Natural Science Foundation of China(52072364,51902305);the Fund for Creative Research Groups(21221061)。
摘 要:A series of novel red-emitting BaLiZn_(3)(BO_(3))_(3):Eu^(3+)phosphors were synthesized through the high temperature solid state reaction method.The phase composition,crystal structure,morphology and photo luminescence property of the BaLiZn_(3)(BO_(3))_(3):Eu^(3+)samples were systematically investigated.The phosphor can be efficiently excited by the near ultraviolet light(NUV)of 396 nm and blue light of 466 nm,and give out red light emission at 618 nm corresponding to the electric dipole transition(^(5)D_(0)→^(7)E_(2)).The optimal doping concentration of Eu^(3+)ions in BaLiZn_(3)(BO_(3))_(3)is determined to be about 3 mol%,and the concentration-quenching phenomenon arise from the electric dipole-dipole interaction.The temperature dependent luminescence behavior of BaLiZn_(3)(BO_(3))_(3):0.03 Eu^(3+)phosphor exhibits its good thermal stability,and the activation energy for thermal quenching characteristics is calculated to be 0.1844 eV.The decay lifetime of the BaLiZn_(3)(BO_(3))_(3):0.03 Eu^(3+)is measured to be 1.88 ms.These results suggest that the BaLiZn_(3)(BO_(3))_(3):Eu^(3+)phosphors have the potential application as a red component in white light emitting diodes(WLEDs)with NUV or blue chips.
关 键 词:Light emitting diodes Red-emitting PHOSPHORS Blue chips Rare earths
分 类 号:TQ422[化学工程] TN312.8[电子电信—物理电子学]
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