基于可靠性试验的InSb红外探测器失效机理研究  

Study on InSb Infrared Detectors Failure Mechanism Based on Reliability Test

作　　者：张伟婷 宁提[1] 李忠贺[1] 李春领[1] ZHANG Wei-ting;NI Ti;LI Zhong-he;LI Chun-ling(North China Research Institute of Electro-Optics,Beijing 100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《红外》2022年第7期15-20,共6页Infrared

摘　　要：对于芯片加速寿命可靠性试验来说,温度是其中最重要的一环。首先,立足于芯片可靠性试验中温度的变化,探究高温烘烤对InSb红外探测器芯片光电性能的影响;然后对盲元的类型进行了分类,并总结出了像元损伤的可能原因;最后利用有限元分析软件对探测器结构进行了热应力仿真和分析,进一步明确了芯片碎裂的机理。由仿真结果可知,芯片中心位置受力较大,其值在680 MPa左右,这与InSb探测器中心位置易发生疲劳失效现象相吻合。提供了一种研究InSb探测器失效机理的新思路,对于高性能InSb红外探测器的研制具有一定的实际指导意义。In the chip accelerated life reliability test,temperature is the most important part.Firstly,based on the temperature change in the chip reliability test,the effect of high-temperature baking on the photoelectric performance of the InSb infrared detector chip is explored.Then,the types of blind pixels are classified,and the possible causes of pixel damage are summarized.Finally,the finite element analysis software is used to simulate and analyze the thermal stress of the detector structure,and further clarify the mechanism of chip fragmentation.It can be seen from the simulation results that the force at the center of the chip is relatively large,and its value is about 680 MPa,which is consistent with the phenomenon that the center of the InSb detector is prone to fatigue failure.A new way of studying the failure mechanism of InSb detectors is provided,which has certain practical guiding significance for the development of high-performance InSb infrared detectors.

关 键 词：温度变化 INSB 光伏探测器 应力 

分 类 号：TN214[电子电信—物理电子学]