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作 者:王运雷 任莉平[1] 董井忍 曹川川[2,3] 刘洵 蒋攀 Wang Yunlei;Ren Liping;Dong Jingren;Cao Chuanchuan;Liu Xun;Jiang Pan(School of Materials Science and Engineering,Chongqing University of Arts and Sciences,Chongqing 402160,China;School of Intelligent Manufacturing Engineering,Chongqing University of Arts and Sciences,Chongqing 402160,China;School of Energy and Power Engineering,Lanzhou University of Technology,Lanzhou 730050,China;China Merchants New Material Technology(Chongqing)Co.,Ltd,Chongqing 402160,China)
机构地区:[1]重庆文理学院材料科学与工程学院,重庆402160 [2]重庆文理学院智能制造工程学院,重庆402160 [3]兰州理工大学能源与动力工程学院,甘肃兰州730050 [4]招商局新材料科技(重庆)有限公司,重庆402160
出 处:《稀有金属材料与工程》2022年第6期2020-2026,共7页Rare Metal Materials and Engineering
基 金:University-level Project Funding(2017RCH01);Science and Technology Research Program of Chongqing Municipal Education Commission(KJQN202001301)。
摘 要:基于电子背散射衍射技术(EBSD)和薄膜材料晶粒生长模型理论,对高压阳极铝箔在不同升温速率下退火的晶粒尺寸及其生长动力学进行了研究。结果表明:依据典型的等温晶粒生长方程,可以计算得出晶粒生长指数n=4,活化能Q_(g)=129 kJ/mol,速率常数K=1.28×10^(-8)m^(4)·s^(-1)。基于薄膜材料的晶粒生长模型和能量各向异性特性,解释了(001)取向晶粒得以快速生长的原因,且发现这些快速生长的晶粒与S晶粒呈40°<111>取向关系。Based on electron backscattered diffraction(EBSD)and grain growth model of thin film materials,grain sizes and growth thermo-kinetics were investigated during annealing with different heating rates in high-voltage anode aluminum foil.Results show that the grain growth exponent n=4,activation energy Q_(g)=129 kJ/mol and rate constant K=1.28×10^(-8)m^(4)·s^(-1) are calculated by the typical isothermal grain growth equation.Based on grain growth model of thin film materials and energy anisotropy,the reasons for the rapid growth of(001)oriented grains are well explained,and a typical 40°<111>misorientation relationship with S-grains is found.
关 键 词:高压阳极铝箔 加热速率 晶粒生长模型 晶粒尺寸 热力学
分 类 号:TG166.3[金属学及工艺—热处理]
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