Current-Induced Magnetic Switching in an L1_(0) FePt Single Layer with Large Perpendicular Anisotropy Through Spin–Orbit Torque  

作　　者：Kaifeng Dong Chao Sun Laizhe Zhu Yiyi Jiao Ying Tao Xin Hu Ruofan Li Shuai Zhang Zhe Guo Shijiang Luo Xiaofei Yang Shaoping Li Long You 

机构地区：[1]School of Automation,China University of Geosciences,Wuhan 430074,China [2]Hubei Key Laboratory of Advanced Control and Intelligent Automation for Complex Systems,China University of Geosciences,Wuhan 430074,China [3]School of Optical and Electronic Information,Huazhong University of Science and Technology,Wuhan 430074,China [4]China Resources Microelectronics Limited,Shanghai 200072,China [5]Shenzhen Huazhong University of Science and Technology Research Institute,Shenzhen 518000,China [6]Wuhan National High Magnetic Field Center,Huazhong University of Science and Technology,Wuhan 430074,China

出　　处：《Engineering》2022年第5期55-61,共7页工程（英文）

基　　金：supported by National Key Research and Development Program of China (2020AAA0109005);the National Natural Science Foundation of China (61674062, 51501168, 41574175, and 41204083);the Fundamental Research Funds for the Central Universities of the China University of Geosciences (Wuhan) (CUG150632 and CUGL160414);the Fundamental Research Funds for National Universities of the China University of Geosciences (Wuhan);the Interdisciplinary program of Wuhan National High Magnetic Field Center (WHMFC202119);Huazhong University of Science and Technology, and Fund from Shenzhen Virtual University Park (2021Szvup091)

摘　　要：In this study,current-induced partial magnetization-based switching was realized through the spin–orbit torque(SOT)in single-layer L1_(0) FePt with a perpendicular anisotropy(K_(u⊥))of 1.19×10^(7) erg·cm^(-3)(1 erg·cm^(-3)=0.1 J·m^(-3)),and its corresponding SOT efficiency(βDL)was 8×10^(-6) Oe·(A·cm^(-2))^(-1)(1 Oe=79.57747 A·m^(-1)),which is several times higher than that of the traditional Ta/CoFeB/MgO structure reported in past work.The SOT in the FePt films originated from the structural inversion asymmetry in the FePt films since the dislocations and defects were inhomogeneously distributed within the samples.Furthermore,the FePt grown on MgO with a granular structure had a larger effective SOT field and effi-ciency than that grown on SrTiO_(3)(STO)with a continuous structure.The SOT efficiency was found to be considerably dependent on not only the sputtering temperature-induced chemical ordering but also the lattice mismatch-induced evolution of the microstructure.Our findings can provide a useful means of efficiently electrically controlling a magnetic bit that is highly thermally stable via SOT.

关 键 词：L1_(0)FePt SOT Inversion asymmetry Magnetic switching Perpendicular anisotropy 

分 类 号：O469[理学—凝聚态物理]