全浸式蒸发冷却IGBT电热耦合模型研究  

Research on Electrothermal Coupling Model of Fully-Immersed Evaporative Cooling IGBT

作　　者：张玉斌 温英科[1] 阮琳[1,2] Zhang Yubin;Wen Yingke;Ruan Lin(Institute of Electrical Engineering Chinese Academy of Sciences ,Beijing 100190 China;University of Chinese Academy of Sciences, Beijing 100049 China)

机构地区：[1]中国科学院电工研究所,北京100190 [2]中国科学院大学,北京100049

出　　处：《电工技术学报》2022年第15期3845-3856,共12页Transactions of China Electrotechnical Society

基　　金：国家自然科学基金资助项目(51777201)。

摘　　要：电力电子器件的小型高集成度发展趋势对散热技术提出挑战。相较于间接液冷,采用全浸式蒸发冷却技术的绝缘栅双极型晶体管(IGBT),具有器件温升低、温度分布均匀的优点,因此其应用于IGBT冷却具有可行性和优越性。该文提出全浸式蒸发冷却IGBT电热耦合模型的建模方法。首先,基于参数拟合法,建立了IGBT模块的电模型,计算功率损耗;其次,根据等效导热系数,建立了全浸式蒸发冷却条件下IGBT的热模型,并在线性时不变系统的假设下得到了全浸式蒸发冷却IGBT的降阶模型;然后,建立了全浸式蒸发冷却IGBT电热耦合模型;最后,通过仿真和实验对建立的模型逐一进行验证,结果表明,所提出的模型能够准确表征IGBT的电、热及其耦合特性,并且具有模型参数提取简单、仿真速度快的优点。The development trend of miniaturization and high integration of power electronic devices poses a challenge to the heat dissipation technology. Compared with indirect liquid cooling,insulated gate bipolar transistor(IGBT) using fully-immersed evaporative cooling technology has the advantages of low device temperature rise and uniform temperature distribution. Therefore, its application in IGBT cooling has feasibility and superiority. This paper presents a modeling method for the electrothermal coupling model of IGBT with fully-immersed evaporative cooling technology. Firstly,based on the parameter fitting method, the electrical model of IGBT module is established to calculate the power loss. Secondly, according to the equivalent thermal conductivity, the thermal model of IGBT under the condition of fully-immersed evaporative cooling technology is established, and then under the assumption of linear time invariant system, the reduced order model of IGBT under fully-immersed evaporative cooling technology is obtained. Finally, the simulation and experimental results show that the proposed model can accurately characterize the electrical, thermal and coupling characteristics of IGBT, and has the advantages of simple model parameter extraction method and fast simulation speed.

关 键 词：IGBT 全浸式蒸发冷却技术 电热耦合模型 降阶模型 

分 类 号：TN322.8[电子电信—物理电子学]